中国物理B ›› 2013, Vol. 22 ›› Issue (11): 117308-117308.doi: 10.1088/1674-1056/22/11/117308

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Low voltage program-erasable Pd-Al2O3-Si capacitors with Ru nanocrystals for nonvolatile memory application

蓝澜, 苟鸿雁, 丁士进, 张卫   

  1. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
  • 收稿日期:2013-03-04 修回日期:2013-04-23 出版日期:2013-09-28 发布日期:2013-09-28
  • 基金资助:
    Project supported by the National Key Technology Research and Development Program of China (Grant No. 2009ZX02302-002), the National Natural Science Foundation of China (Grant No. 61274088), and the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-08-0127).

Low voltage program-erasable Pd-Al2O3-Si capacitors with Ru nanocrystals for nonvolatile memory application

Lan Lan (蓝澜), Gou Hong-Yan (苟鸿雁), Ding Shi-Jin (丁士进), Zhang Wei (张卫)   

  1. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
  • Received:2013-03-04 Revised:2013-04-23 Online:2013-09-28 Published:2013-09-28
  • Contact: Ding Shi-Jin E-mail:sjding@fudan.edu.cn
  • Supported by:
    Project supported by the National Key Technology Research and Development Program of China (Grant No. 2009ZX02302-002), the National Natural Science Foundation of China (Grant No. 61274088), and the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-08-0127).

PDF (PC)

451

赞

摘要： Pd-Al2O3-Si capacitors with Ru nanocrystals are fabricated and electrically characterized for nonvolatile memory application. While keeping the entire insulator Al2O3 thickness fixed, the memory window has a strong dependence on the tunneling layer thickness under low operating voltages, whereas it has weak dependence under high operating voltages. As for the optimal configuration comprised of 6-nm tunneling layer and 22-nm blocking layer, the resulting memory window increases from 1.5 V to 5.3 V with bias pulse increasing from 10-5 s to 10-2 s under ±7 V. A ten-year memory window as large as 5.2 V is extrapolated at room temperature after ±8 V/1 ms programming/erasing pulses.

关键词: metal-oxide-semiconductor capacitors, nonvolatile memory, Ru nanocrystals, atomic-layer-deposition

Abstract: Pd-Al2O3-Si capacitors with Ru nanocrystals are fabricated and electrically characterized for nonvolatile memory application. While keeping the entire insulator Al2O3 thickness fixed, the memory window has a strong dependence on the tunneling layer thickness under low operating voltages, whereas it has weak dependence under high operating voltages. As for the optimal configuration comprised of 6-nm tunneling layer and 22-nm blocking layer, the resulting memory window increases from 1.5 V to 5.3 V with bias pulse increasing from 10-5 s to 10-2 s under ±7 V. A ten-year memory window as large as 5.2 V is extrapolated at room temperature after ±8 V/1 ms programming/erasing pulses.

Key words: metal-oxide-semiconductor capacitors, nonvolatile memory, Ru nanocrystals, atomic-layer-deposition

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
73.61.-r (Electrical properties of specific thin films)