Preparation of size controllable copper nanocrystals for nonvolatile memory applications

doi:10.1088/1674-1056/19/10/108102

中国物理B ›› 2010, Vol. 19 ›› Issue (10): 108102-108102.doi: 10.1088/1674-1056/19/10/108102

• CROSS DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Preparation of size controllable copper nanocrystals for nonvolatile memory applications

王利, 孙红芳, 周惠华, 朱静

Beijing National Center for Electron Microscopy, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

收稿日期:2010-02-23 修回日期:2010-05-19 出版日期:2010-10-15 发布日期:2010-10-15

Preparation of size controllable copper nanocrystals for nonvolatile memory applications

Wang Li(王利), Sun Hong-Fang(孙红芳), Zhou Hui-Hua(周惠华), and Zhu Jing(朱静)^†

Beijing National Center for Electron Microscopy, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

Received:2010-02-23 Revised:2010-05-19 Online:2010-10-15 Published:2010-10-15

摘要/Abstract

摘要： A method of fabricating Cu nanocrystals embedded in SiO₂ dielectric film for nonvolatile memory applications by magnetron sputtering is introduced in this paper. The average size and distribution density of Cu nanocrystal grains are controlled by adjusting experimental parameters. The relationship between nanocrystal floating gate micro-structure and its charge storage capability is also discussed theoretically.

Abstract: A method of fabricating Cu nanocrystals embedded in SiO₂ dielectric film for nonvolatile memory applications by magnetron sputtering is introduced in this paper. The average size and distribution density of Cu nanocrystal grains are controlled by adjusting experimental parameters. The relationship between nanocrystal floating gate micro-structure and its charge storage capability is also discussed theoretically.

Key words: nanocrystal grain, nonvolatile memory, Coulomb blockade effect, magnetron sputtering

中图分类号: (Nanocrystals)

61.46.Hk

81.15.Cd (Deposition by sputtering) 81.16.-c (Methods of micro- and nanofabrication and processing) 84.30.Sk (Pulse and digital circuits)

王利, 孙红芳, 周惠华, 朱静. Preparation of size controllable copper nanocrystals for nonvolatile memory applications[J]. 中国物理B, 2010, 19(10): 108102-108102.

Wang Li(王利), Sun Hong-Fang(孙红芳), Zhou Hui-Hua(周惠华), and Zhu Jing(朱静). Preparation of size controllable copper nanocrystals for nonvolatile memory applications[J]. Chin. Phys. B, 2010, 19(10): 108102-108102.

参考文献 11

[1]	Tiwari S, Rana F, Hanafi H, Hartstein A, Crabbe E F and Chan K 1996 Appl. Phys. Lett. 68 1377
[2]	Liu Z T, Lee C, Narayanan V, Pei G and Kan E C 2002 IEEE Trans. Electron Devices 49 1606
[3]	Lee C H, Meteer J, Narayanan V and Kan E C 2005 J. Electron. Mater. 34 1
[4]	Wang Q, Song Z T, Liu W L, Lin C L and Wang T H 2004 Appl. Surf. Sci. 230 8
[5]	Yang J S, Kim S I, Kim Y T, Cho W J and Park J H 2008 Microelectron. J. 39 1553
[6]	Kanoun M, Busseret C, Poncet A, Souifi A, Baron T and Gautier B 2006 Solid State Electron. 50 1310
[7]	Li X L, Feng S S and Chen G G 2008 Chin. Phys. B 17 1070
[8]	Eaglesham D J and Cerullo M 1990 Phys. Rev. Lett. 64 1943
[9]	Wang L, Sun H F, Zhou H H and Zhu J 2009 Mater. Sci. Forum 610--613 585
[10]	Lee J J, Harada Y, Pyun J W and Kwong D L 2005 Appl. Phys. Lett. 86 103505
[11]	Samanta S K, Yoo W J, Samudra G, Tok E S, Bera L K and Balasubramanian N 2005 Appl. Phys. Lett. 87 113110 endfootnotesize

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Preparation of size controllable copper nanocrystals for nonvolatile memory applications

Preparation of size controllable copper nanocrystals for nonvolatile memory applications

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