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Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands
汤振杰, 李荣, 张希威
Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands
Zhen-Jie Tang(汤振杰), Rong Li(李荣), Xi-Wei Zhang(张希威)
中国物理B . 2020, (
4
): 47701 -047701 . DOI: 10.1088/1674-1056/ab7224