Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors

doi:10.1088/1674-1056/28/6/067304

中国物理B ›› 2019, Vol. 28 ›› Issue (6): 67304-067304.doi: 10.1088/1674-1056/28/6/067304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Method of evaluating interface traps in Al₂O₃/AlGaN/GaN high electron mobility transistors

Si-Qin-Gao-Wa Bao(包斯琴高娃), Xiao-Hua Ma(马晓华), Wei-Wei Chen(陈伟伟), Ling Yang(杨凌), Bin Hou(侯斌), Qing Zhu(朱青), Jie-Jie Zhu(祝杰杰), Yue Hao(郝跃)

1 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
3 School of Science, Inner Mongolia University of Technology, Hohhot 010051, China;
4 China Academy of Space Technology(Xi'an), Xi'an 710071, China

收稿日期:2018-11-20 修回日期:2019-04-02 出版日期:2019-06-05 发布日期:2019-06-05
通讯作者: Xiao-Hua Ma E-mail:xhma@xidian.edu.cn
基金资助:
Project supported by the Key Program of National Natural Science Foundation of China (Grant Nos. 61334002 and 61634005) and the National Natural Science Foundation of China (Grant Nos. 61604114 and 61704124).

Method of evaluating interface traps in Al₂O₃/AlGaN/GaN high electron mobility transistors

Si-Qin-Gao-Wa Bao(包斯琴高娃)^1,2,3, Xiao-Hua Ma(马晓华)^1,2, Wei-Wei Chen(陈伟伟)⁴, Ling Yang(杨凌)^1,2, Bin Hou(侯斌)^1,2, Qing Zhu(朱青)^1,2, Jie-Jie Zhu(祝杰杰)^1,2, Yue Hao(郝跃)²

1 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
3 School of Science, Inner Mongolia University of Technology, Hohhot 010051, China;
4 China Academy of Space Technology(Xi'an), Xi'an 710071, China

Received:2018-11-20 Revised:2019-04-02 Online:2019-06-05 Published:2019-06-05
Contact: Xiao-Hua Ma E-mail:xhma@xidian.edu.cn
Supported by:
Project supported by the Key Program of National Natural Science Foundation of China (Grant Nos. 61334002 and 61634005) and the National Natural Science Foundation of China (Grant Nos. 61604114 and 61704124).

摘要/Abstract

摘要：

In this paper, the interface states of the AlGaN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) with an Al₂O₃ gate dielectric are systematically evaluated. By frequency-dependent capacitance and conductance measurements, trap density and time constant at Al₂O₃/AlGaN and AlGaN/GaN interface are determined. The experimental results reveal that the density of trap states and the activation energy at the Al₂O₃/AlGaN interface are much higher than at the AlGaN/GaN interface. The photo-assisted capacitance-voltage measurements are performed to characterize the deep-level traps located near mid-gap at the Al₂O₃/AlGaN interface, which indicates that a density of deep-level traps is lower than the density of the shallow-level states.

关键词: AlGaN/GaN, HEMTs, interface traps, frequency-dependent C-V measurements, photo-assisted C-V measurements

Abstract:

Key words: AlGaN/GaN, HEMTs, interface traps, frequency-dependent C-V measurements, photo-assisted C-V measurements

中图分类号: (III-V semiconductors)

73.61.Ey

73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths)

包斯琴高娃, 马晓华, 陈伟伟, 杨凌, 侯斌, 朱青, 祝杰杰, 郝跃. Method of evaluating interface traps in Al₂O₃/AlGaN/GaN high electron mobility transistors[J]. 中国物理B, 2019, 28(6): 67304-067304.

Si-Qin-Gao-Wa Bao(包斯琴高娃), Xiao-Hua Ma(马晓华), Wei-Wei Chen(陈伟伟), Ling Yang(杨凌), Bin Hou(侯斌), Qing Zhu(朱青), Jie-Jie Zhu(祝杰杰), Yue Hao(郝跃). Method of evaluating interface traps in Al₂O₃/AlGaN/GaN high electron mobility transistors[J]. Chin. Phys. B, 2019, 28(6): 67304-067304.

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Method of evaluating interface traps in Al₂O₃/AlGaN/GaN high electron mobility transistors

Method of evaluating interface traps in Al₂O₃/AlGaN/GaN high electron mobility transistors

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