Method of evaluating interface traps in Al 2O 3/AlGaN/GaN high electron mobility transistors
包斯琴高娃, 马晓华, 陈伟伟, 杨凌, 侯斌, 朱青, 祝杰杰, 郝跃
Method of evaluating interface traps in Al 2O 3/AlGaN/GaN high electron mobility transistors
Si-Qin-Gao-Wa Bao(包斯琴高娃), Xiao-Hua Ma(马晓华), Wei-Wei Chen(陈伟伟), Ling Yang(杨凌), Bin Hou(侯斌), Qing Zhu(朱青), Jie-Jie Zhu(祝杰杰), Yue Hao(郝跃)
中国物理B . 2019, (6): 67304 -067304 .  DOI: 10.1088/1674-1056/28/6/067304