Enhancement of off-state characteristics in junctionless field effect transistor using a field plate

doi:10.1088/1674-1056/27/6/067402

中国物理B ›› 2018, Vol. 27 ›› Issue (6): 67402-067402.doi: 10.1088/1674-1056/27/6/067402

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Enhancement of off-state characteristics in junctionless field effect transistor using a field plate

Bin Wang(王斌), He-Ming Zhang(张鹤鸣), Hui-Yong Hu(胡辉勇), Xiao-Wei Shi(史小卫)

1 State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2 State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2017-10-27 修回日期:2018-03-30 出版日期:2018-06-05 发布日期:2018-06-05
通讯作者: Bin Wang E-mail:wbin@xidian.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No.61704130),the Fundamental Research Funds for the Central Universities,China (Grant No.20101166085) and the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology from Institute of Microelectronics,Chinese Academy of Sciences (Grant No.90109162905).

Enhancement of off-state characteristics in junctionless field effect transistor using a field plate

Bin Wang(王斌)¹, He-Ming Zhang(张鹤鸣)², Hui-Yong Hu(胡辉勇)², Xiao-Wei Shi(史小卫)¹

1 State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2 State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2017-10-27 Revised:2018-03-30 Online:2018-06-05 Published:2018-06-05
Contact: Bin Wang E-mail:wbin@xidian.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No.61704130),the Fundamental Research Funds for the Central Universities,China (Grant No.20101166085) and the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology from Institute of Microelectronics,Chinese Academy of Sciences (Grant No.90109162905).

摘要/Abstract

摘要： In this paper, a novel junctionless field effect transistor (JLFET) is proposed. In the presence of a field plate between gate and drain, the gate-induced drain leakage (GIDL) effect is suppressed due to the decrease of lateral band-to-band tunneling probability. Thus, the off-state current I_off, which is mainly provided by the GIDL current, is reduced. Sentaurus simulation shows that the I_off of the new optimized JLFET is reduced by~2 orders and its sub-threshold swing can reach 76.8 mV/decade with little influence on its on-state current I_on, so its I_on/I_off ratio is improved by 2 orders of magnitude compared with that of the normal JLFET. Optimization of device parameters such as Φ_fps (the work difference between field plate and substrate) and L_FP (the length of field plate), is also discussed in detail.

关键词: lateral band to band tunneling, GIDL, off-state current, field plate

Abstract: In this paper, a novel junctionless field effect transistor (JLFET) is proposed. In the presence of a field plate between gate and drain, the gate-induced drain leakage (GIDL) effect is suppressed due to the decrease of lateral band-to-band tunneling probability. Thus, the off-state current I_off, which is mainly provided by the GIDL current, is reduced. Sentaurus simulation shows that the I_off of the new optimized JLFET is reduced by~2 orders and its sub-threshold swing can reach 76.8 mV/decade with little influence on its on-state current I_on, so its I_on/I_off ratio is improved by 2 orders of magnitude compared with that of the normal JLFET. Optimization of device parameters such as Φ_fps (the work difference between field plate and substrate) and L_FP (the length of field plate), is also discussed in detail.

Key words: lateral band to band tunneling, GIDL, off-state current, field plate

中图分类号: (Tunneling phenomena: single particle tunneling and STM)

74.55.+v

85.30.Tv (Field effect devices) 85.30.De (Semiconductor-device characterization, design, and modeling)

王斌, 张鹤鸣, 胡辉勇, 史小卫. Enhancement of off-state characteristics in junctionless field effect transistor using a field plate[J]. 中国物理B, 2018, 27(6): 67402-067402.

Bin Wang(王斌), He-Ming Zhang(张鹤鸣), Hui-Yong Hu(胡辉勇), Xiao-Wei Shi(史小卫). Enhancement of off-state characteristics in junctionless field effect transistor using a field plate[J]. Chin. Phys. B, 2018, 27(6): 67402-067402.

参考文献 26

[1]	Taur Y, Chen H P, Wang W, Lo S H and Wann C 2012 IEEE Trans. Electron Dev. 59 863
[2]	Wang B, Zhang H M, Hu H Y, Zhang Y M, Zhou C Y, Wang G Y and Li Y C 2013 Chin. Phys. B 22 028503
[3]	Li Y C, Zhang H M, Zhang Y M, Hu H Y, Wang B, Lou Y L and Zhou C Y 2013 Chin. Phys. B 22 038501
[4]	Leung G, Pan A and Chi C 2015 IEEE Trans. Electron Dev. 62 3208
[5]	Han M H, Chang C Y, Jhan Y R, Wu J J, Chen H B, Cheng Y C and Wu Y C 2013 IEEE Electron Dev. Lett. 34 157
[6]	Li C, Zhuang Y Q, Zhang L and Jin G 2014 Chin. Phys. B 23 038502
[7]	Migita S, Morita Y, Matsukawa T, Masahara M and Ota H 2014 IEEE Trans. Nanotechnol. 13 208
[8]	Im K S, Seo J H, Yoon Y J and Jiang Y I 2014 Jpn. J. Appl. Phys. 53 8130
[9]	Li C, Zhuang Y Q, Zhang L and Jin G 2014 Chin. Phys. B 23 018501
[10]	Jhan Y R, Thirunavukkarasu V, Wang C P and Wu Y C 2015 IEEE Electron Dev. Lett. 36 654
[11]	Gupta M and Kranti A 2015 ECS Trans. 66 2285
[12]	Wong I, Chen Y T, Huang S H, Tu W H, Chen Y S and Liu C W 2015 IEEE Trans. Nanotechnol. 14 878
[13]	Wang H, Han W H, Zhao X S, Zhang W, Lv Q F, Ma L H and Yang F H 2016 Chin. Phys. B 25 0108102
[14]	Liu F Y, Liu H Z, Liu B W and Guo Y F 2016 Chin. Phys. B 25 047305
[15]	Lucian B, Farzan J, Didier B and Jean-Michel S 2013 IEEE Trans. Electron Dev. 60 2080
[16]	Shibir B, Pranav K A, Yogesh G and Bahniman G 2015 Appl. Phys. A 118 1527
[17]	Shubham S and Mamidala J K 2017 IEEE Trans. Electron Dev. 64 1330
[18]	Shiromani B R and Bahniman G 2015 RSC Adv. 5 59665
[19]	Shubham S and Mamidala J K 2016 IEEE Trans. Electron Dev. 63 4138
[20]	Shubham S and Mamidala J K 2017 IEEE Trans. Electron Dev. 64 2604
[21]	Balraj S, Deepti G, Ekta G, Sanjay K, Kunal S and Satyabrata J 2016 J. Comput. Electron. 15 502
[22]	Mamidala J K and Shubham S 2016 IEEE Trans. Electron Dev. 63 3250
[23]	Shubham S and Mamidala J K 2016 IEEE Trans. Electron Dev. 63 3790
[24]	Mao W, She W B, Yang C, Zhang J F, Zheng X F, Wang C and Hao Y 2016 Chin. Phys. B 25 017303
[25]	Cheng K, Hu S D, Lei M, Yuan Q, Jiang Y Y, Huang Y, Yang D, Lin Z, Zhou X C and Tang F 2017 Superlattices and Microstructures, in press
[26]	Liu S Y, Ren X F, Fang Y C, Sun W F, Su W, Ma S L, Lin F, Liu Y W and Sun G P 2017 IEEE Trans. Electron Dev. 64 3275

Enhancement of off-state characteristics in junctionless field effect transistor using a field plate

Enhancement of off-state characteristics in junctionless field effect transistor using a field plate

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