Field plate structural optimization for enhancing the power gain of GaN-based HEMTs

doi:10.1088/1674-1056/22/9/097303

中国物理B ›› 2013, Vol. 22 ›› Issue (9): 97303-097303.doi: 10.1088/1674-1056/22/9/097303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Field plate structural optimization for enhancing the power gain of GaN-based HEMTs

张凯^a, 曹梦逸^a, 雷晓艺^a, 赵胜雷^a, 杨丽媛^a, 郑雪峰^a, 马晓华^{a b}, 郝跃^a

a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;
b School of Technical Physics, Xidian University, Xi’an 710071, China

收稿日期:2013-02-05 修回日期:2013-03-26 出版日期:2013-07-26 发布日期:2013-07-26
基金资助:
Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities, China (Grant No. K5051225013).

Field plate structural optimization for enhancing the power gain of GaN-based HEMTs

Zhang Kai (张凯)^a, Cao Meng-Yi (曹梦逸)^a, Lei Xiao-Yi (雷晓艺)^a, Zhao Sheng-Lei (赵胜雷)^a, Yang Li-Yuan (杨丽媛)^a, Zheng Xue-Feng (郑雪峰)^a, Ma Xiao-Hua (马晓华)^{a b}, Hao Yue (郝跃)^a

a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;
b School of Technical Physics, Xidian University, Xi’an 710071, China

Received:2013-02-05 Revised:2013-03-26 Online:2013-07-26 Published:2013-07-26
Contact: Ma Xiao-Hua E-mail:xhma@xidian.edu.cn
Supported by:
Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities, China (Grant No. K5051225013).

摘要/Abstract

摘要： A novel source-connected field plate structure, featuring the same photolithography mask as the gate electrode, is proposed as an improvement over the conventional field plate (FP) techniques to enhance the frequency performance in GaN-based HEMTs. The influences of the field plate on frequency and breakdown performance are investigated simultaneously by using a two-dimensional physics-based simulation. Compared with the conventional T-gate structures with a field plate length of 1.2 μm, this field plate structure can induce the small signal power gain at 10 GHz to increase by 5-9.5 dB, which depends on the distance between source FP and dramatically shortened gate FP. This technique minimizes the parasitic capacitances, especially the gate-to-drain capacitance, showing a substantial potential for millimeter-wave, high power applications.

关键词: GaN-based HEMTs, breakdown characteristics, field plates, power gain

Abstract: A novel source-connected field plate structure, featuring the same photolithography mask as the gate electrode, is proposed as an improvement over the conventional field plate (FP) techniques to enhance the frequency performance in GaN-based HEMTs. The influences of the field plate on frequency and breakdown performance are investigated simultaneously by using a two-dimensional physics-based simulation. Compared with the conventional T-gate structures with a field plate length of 1.2 μm, this field plate structure can induce the small signal power gain at 10 GHz to increase by 5-9.5 dB, which depends on the distance between source FP and dramatically shortened gate FP. This technique minimizes the parasitic capacitances, especially the gate-to-drain capacitance, showing a substantial potential for millimeter-wave, high power applications.

Key words: GaN-based HEMTs, breakdown characteristics, field plates, power gain

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

73.61.Ey (III-V semiconductors) 85.30.Tv (Field effect devices)

张凯, 曹梦逸, 雷晓艺, 赵胜雷, 杨丽媛, 郑雪峰, 马晓华, 郝跃. Field plate structural optimization for enhancing the power gain of GaN-based HEMTs[J]. 中国物理B, 2013, 22(9): 97303-097303.

Zhang Kai (张凯), Cao Meng-Yi (曹梦逸), Lei Xiao-Yi (雷晓艺), Zhao Sheng-Lei (赵胜雷), Yang Li-Yuan (杨丽媛), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Field plate structural optimization for enhancing the power gain of GaN-based HEMTs[J]. Chin. Phys. B, 2013, 22(9): 97303-097303.

参考文献 16

[1]	Karmalkar S and Mishra U K 2001 IEEE Trans. Electron Devices 48 1515
[2]	Saito W, Takada Y, Kuraguchi M, Tsuda K, Omura I, Ogura T and Ohashi H 2003 IEEE Trans. Electron Devices 50 2528
[3]	Xing H, Dora Y, Chini A, Heikman S, Keller S and Mishra U K 2004 IEEE Electron Device Lett. 25 161
[4]	Ando Y, Okamoto Y, Miamoto H, Nakayama T, Inoue T and Kuzuhara M 2003 IEEE Electron Device Lett. 24 289
[5]	Saito W, Kakiuchi Y, Nitta T, Saito Y, Noda T, Fujimoto H, Yoshioka A, Ohno T and Yamaguchi M 2010 IEEE Electron Device Lett. 31 659
[6]	Yang L, Hu G Z, Hao Y, Ma X H, Quan S, Yang L Y and Jiang S G 2010 Chin. Phys. B 19 047301
[7]	Wu Y F, Moore M, Saxler A, Wisleder T and Parikh P 2006 Device Research Conference, June 26-28, 2006, PA, USA, p. 151
[8]	Okamoto Y, Ando Y, Nakayama T, Hataya K, Miyamoto H, Inoue T, Sendaand M, Hirata K, Kosaki M, Shibata N and Kuzuhara M 2004 IEEE Trans. Electron Devices 51 2217
[9]	Dora Y, Chakraborty A, McCarthy L, Keller S, DenBaars S P and Mishra U K 2006 IEEE Electron Device Lett. 27 713
[10]	Pei Y, Chen Z, Brown D, Keller S, DenBaars S P and Mishra U K 2009 IEEE Electron Device Lett. 30 328
[11]	Zhang K, Cao M Y, Chen Y H, Yang L Y, Wang C, Ma X H and Hao Y 2013 Chin. Phys. B 22 057304
[12]	Xie G, Edward X, Lee J, Hashemi N, Zhang B, Fu F Y and Ng W T 2012 IEEE Electron Device Lett. 33 670
[13]	Ando Y, Wakejima A, Okamoto Y, Nakayama T, Ota K, Yamanoguchi K, Murase Y, Kasahara K, Matsunaga K, Inoue T, Miyamoto H and Miyamoto H 2005 IEDM Tech. Dig. 576
[14]	Eldad B T, Hilt O, Brunner F, Sidorov V, Würfl J and Günther T 2010 IEEE Trans. Electron Devices 57 1208
[15]	Dambrine G, Cappy A, Heliodore F and Playez E 1988 IEEE Trans. Microw. Theory Tech. 36 1151
[16]	Brannick A, Zakhleniuk N A, Ridley B K, James R, Shealy W, Schaff J and Lester F E 2009 IEEE Electron Device Lett. 30 436

Field plate structural optimization for enhancing the power gain of GaN-based HEMTs

Field plate structural optimization for enhancing the power gain of GaN-based HEMTs

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 16

相关文章 6

Metrics

本文评价

推荐阅读 0

[1]	祁路伟, 刘晓宇, 孟进, 张德海, 周静涛. Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure[J]. 中国物理B, 2020, 29(5): 57306-057306.
[2]	宓珉瀚, 张凯, 赵胜雷, 王冲, 张进成, 马晓华, 郝跃. Improved performance of AlGaN/GaN HEMT by N₂O plasma pre-treatment[J]. , 2015, 24(2): 27303-027303.
[3]	宓珉瀚, 张凯, 陈兴, 赵胜雷, 王冲, 张进成, 马晓华, 郝跃. Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage[J]. , 2014, 23(7): 77304-077304.
[4]	袁昊, 汤晓燕, 张义门, 张玉明, 宋庆文, 杨霏, 吴昊. 4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination[J]. 中国物理B, 2014, 23(5): 57102-057102.
[5]	孔欣, 魏珂, 刘果果, 刘新宇. Improvement of breakdown characteristics of AlGaN/GaN HEMT with U-type gate foot for millimeter-wave power application[J]. Chin. Phys. B, 2012, 21(12): 128501-128501.
[6]	乔明, 庄翔, 吴丽娟, 章文通, 温恒娟, 张波, 李肇基. Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates[J]. 中国物理B, 2012, 21(10): 108502-108502.