Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes

doi:10.1088/1674-1056/22/10/106107

中国物理B ›› 2013, Vol. 22 ›› Issue (10): 106107-106107.doi: 10.1088/1674-1056/22/10/106107

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes

汤岑^a, 谢刚^a, 张丽^b, 郭清^a, 汪涛^a, 盛况^a

a College of Electrical Engineering, Zhejiang University, Hangzhou 310007, China;
b Division of Energy, High Technology Research and Development Center, the Ministry of Science and Technology, Beijing 100044, China

收稿日期:2013-02-27 修回日期:2013-04-09 出版日期:2013-08-30 发布日期:2013-08-30
基金资助:
Project supported by the Science Foundation of the Ministry of Education of China (Grant No. 20100101110056) and the Natural Science Foundation of Zhejiang Province of China for Distinguished Young Scholars (Grant No. R1100468).

Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes

Tang Cen (汤岑)^a, Xie Gang (谢刚)^a, Zhang Li (张丽)^b, Guo Qing (郭清)^a, Wang Tao (汪涛)^a, Sheng Kuang (盛况)^a

a College of Electrical Engineering, Zhejiang University, Hangzhou 310007, China;
b Division of Energy, High Technology Research and Development Center, the Ministry of Science and Technology, Beijing 100044, China

Received:2013-02-27 Revised:2013-04-09 Online:2013-08-30 Published:2013-08-30
Contact: Xie Gang E-mail:xielyz@zju.edu.cn
Supported by:
Project supported by the Science Foundation of the Ministry of Education of China (Grant No. 20100101110056) and the Natural Science Foundation of Zhejiang Province of China for Distinguished Young Scholars (Grant No. R1100468).

摘要/Abstract

摘要： A novel structure of AlGaN/GaN Schottky barrier diode (SBD) featuring electric field optimization techniques of anode-connected-field-plate (AFP) and magnesium-doped p-type buried layer under the two-dimensional electron gas (2DEG) channel is proposed. In comparison with conventional AlGaN/GaN SBDs, the magnesium-doped p-type buried layer in the proposed structure can provide holes that can help to deplete the surface 2DEG. As a result, surface field strength around the electrode edges is significantly suppressed and the electric field along the channel is distributed more evenly. Through 2D numerical analysis, the AFP parameters (field plate length, L_AFP, and field plate height, T_AFP) and p-type buried layer parameters (p-type layer concentration, N_P, and p-type layer thickness, T_P) are optimized to achieve a three-equal-peak surface channel field distribution under exact charge balance conditions. A novel structure with a total drift region length of 10.5 μm and a magnesium-doped p-type concentration of 1×10¹⁷ cm^-3 achieves a high breakdown voltage (V_B) of 1.8 kV, showing 5 times improvement compared with the conventional SBD with the same device dimension.

关键词: gallium nitride, high voltage SBD, field plate, magnesium buried layer

Abstract: A novel structure of AlGaN/GaN Schottky barrier diode (SBD) featuring electric field optimization techniques of anode-connected-field-plate (AFP) and magnesium-doped p-type buried layer under the two-dimensional electron gas (2DEG) channel is proposed. In comparison with conventional AlGaN/GaN SBDs, the magnesium-doped p-type buried layer in the proposed structure can provide holes that can help to deplete the surface 2DEG. As a result, surface field strength around the electrode edges is significantly suppressed and the electric field along the channel is distributed more evenly. Through 2D numerical analysis, the AFP parameters (field plate length, L_AFP, and field plate height, T_AFP) and p-type buried layer parameters (p-type layer concentration, N_P, and p-type layer thickness, T_P) are optimized to achieve a three-equal-peak surface channel field distribution under exact charge balance conditions. A novel structure with a total drift region length of 10.5 μm and a magnesium-doped p-type concentration of 1×10¹⁷ cm^-3 achieves a high breakdown voltage (V_B) of 1.8 kV, showing 5 times improvement compared with the conventional SBD with the same device dimension.

Key words: gallium nitride, high voltage SBD, field plate, magnesium buried layer

中图分类号: (III-V and II-VI semiconductors)

61.72.uj

51.50.+v (Electrical properties)

汤岑, 谢刚, 张丽, 郭清, 汪涛, 盛况. Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes[J]. 中国物理B, 2013, 22(10): 106107-106107.

Tang Cen (汤岑), Xie Gang (谢刚), Zhang Li (张丽), Guo Qing (郭清), Wang Tao (汪涛), Sheng Kuang (盛况). Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes[J]. Chin. Phys. B, 2013, 22(10): 106107-106107.

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Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes

Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes

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