中国物理B ›› 2013, Vol. 22 ›› Issue (5): 57304-057304.doi: 10.1088/1674-1056/22/5/057304
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
张凯a, 曹梦逸a, 陈永和a, 杨丽媛a, 王冲a, 马晓华a b, 郝跃a
Zhang Kai (张凯)a, Cao Meng-Yi (曹梦逸)a, Chen Yong-He (陈永和)a, Yang Li-Yuan (杨丽媛)a, Wang Chong (王冲)a, Ma Xiao-Hua (马晓华)a b, Hao Yue (郝跃)a
摘要: V-gate GaN high electron mobility transistors (HEMTs) are fabricated and investigated systematically. A V-shaped recess geometry is obtained using an improved Si3N4 recess etching technology. Compared with standard HMETs, the fabricated V-gate HEMTs exhibit a 17% higher peak extrinsic transconductance due to a narrowed gate foot. Moreover, both the gate leakage and current dispersion are dramatically suppressed simultaneously, although a slight degradation of frequency response is observed. Based on a two-dimensional electric field simulation using Silvaco "ATLAS" for both standard HEMTs and V-gate HEMTs, the relaxation in peak electric field at gate edge is identified as the predominant factor leading to the superior performance of V-gate HEMTs.
中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)