中国物理B ›› 2013, Vol. 22 ›› Issue (5): 57304-057304.doi: 10.1088/1674-1056/22/5/057304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Fabrication and characterization of V-gate AlGaN/GaN high electron mobility transistors

张凯a, 曹梦逸a, 陈永和a, 杨丽媛a, 王冲a, 马晓华a b, 郝跃a   

  1. a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
    b School of Technical Physics, Xidian University, Xi'an 710071, China
  • 收稿日期:2012-09-17 修回日期:2012-11-27 出版日期:2013-04-01 发布日期:2013-04-01
  • 基金资助:
    Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915) and the National Natural Science Foundation of China (Grant Nos. 61106106 and 61204085).

Fabrication and characterization of V-gate AlGaN/GaN high electron mobility transistors

Zhang Kai (张凯)a, Cao Meng-Yi (曹梦逸)a, Chen Yong-He (陈永和)a, Yang Li-Yuan (杨丽媛)a, Wang Chong (王冲)a, Ma Xiao-Hua (马晓华)a b, Hao Yue (郝跃)a   

  1. a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
    b School of Technical Physics, Xidian University, Xi'an 710071, China
  • Received:2012-09-17 Revised:2012-11-27 Online:2013-04-01 Published:2013-04-01
  • Contact: Ma Xiao-Hua E-mail:xhma@xidian.edu.cn
  • Supported by:
    Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915) and the National Natural Science Foundation of China (Grant Nos. 61106106 and 61204085).

摘要: V-gate GaN high electron mobility transistors (HEMTs) are fabricated and investigated systematically. A V-shaped recess geometry is obtained using an improved Si3N4 recess etching technology. Compared with standard HMETs, the fabricated V-gate HEMTs exhibit a 17% higher peak extrinsic transconductance due to a narrowed gate foot. Moreover, both the gate leakage and current dispersion are dramatically suppressed simultaneously, although a slight degradation of frequency response is observed. Based on a two-dimensional electric field simulation using Silvaco "ATLAS" for both standard HEMTs and V-gate HEMTs, the relaxation in peak electric field at gate edge is identified as the predominant factor leading to the superior performance of V-gate HEMTs.

关键词: high electron mobility transistors, electric field distribution, field plate, current dispersion

Abstract: V-gate GaN high electron mobility transistors (HEMTs) are fabricated and investigated systematically. A V-shaped recess geometry is obtained using an improved Si3N4 recess etching technology. Compared with standard HMETs, the fabricated V-gate HEMTs exhibit a 17% higher peak extrinsic transconductance due to a narrowed gate foot. Moreover, both the gate leakage and current dispersion are dramatically suppressed simultaneously, although a slight degradation of frequency response is observed. Based on a two-dimensional electric field simulation using Silvaco "ATLAS" for both standard HEMTs and V-gate HEMTs, the relaxation in peak electric field at gate edge is identified as the predominant factor leading to the superior performance of V-gate HEMTs.

Key words: high electron mobility transistors, electric field distribution, field plate, current dispersion

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
73.61.Ey (III-V semiconductors) 85.30.Tv (Field effect devices)