中国物理B ›› 2012, Vol. 21 ›› Issue (10): 108502-108502.doi: 10.1088/1674-1056/21/10/108502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates

乔明, 庄翔, 吴丽娟, 章文通, 温恒娟, 张波, 李肇基   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2012-02-21 修回日期:2012-04-16 出版日期:2012-09-01 发布日期:2012-09-01
  • 基金资助:
    Project supported partially by the National Natural Science Foundation of China (Grant Nos. 60906038 and 61076082).

Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates

Qiao Ming (乔明), Zhuang Xiang (庄翔), Wu Li-Juan (吴丽娟), Zhang Wen-Tong (章文通), Wen Heng-Juan (温恒娟), Zhang Bo (张波), Li Zhao-Ji (李肇基)   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2012-02-21 Revised:2012-04-16 Online:2012-09-01 Published:2012-09-01
  • Contact: Qiao Ming E-mail:qiaoming@uestc.edu.cn
  • Supported by:
    Project supported partially by the National Natural Science Foundation of China (Grant Nos. 60906038 and 61076082).

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摘要： Based on the theoretical and experimental investigation of a thin silicon layer (TSL) with linear variable doping (LVD) and further research on the TSL LVD with a multiple step field plate (MSFP), a breakdown voltage (BV) model is proposed and experimentally verified in this paper. With the two-dimensional Poisson equation of the silicon on insulator (SOI) device, the lateral electric field in drift region of the thin silicon layer is assumed to be constant. For the SOI device with LVD in the thin silicon layer, the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field (ENDIF), from which the reduced surface field (RESURF) condition is deduced. The drain in the centre of the device has a good self-isolation effect, but the problem of the high voltage interconnection (HVI) line will become serious. The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device. Based on this model, the TSL LVD SOI n-channel lateral double-diffused MOSFET (nLDMOS) with MSFP is realized. The experimental breakdown voltage (BV) and specific on-resistance (Ron, sp) of the TSL LVD SOI device are 694 V and 21.3 Ω · mm2 with a drift region length of 60 μm, buried oxide layer of 3 μm, and silicon layer of 0.15 μm, respectively.

关键词: breakdown voltage model, enhanced dielectric layer field, thin silicon layer, linear variable doping, multiple step field plates

Abstract: Based on the theoretical and experimental investigation of a thin silicon layer (TSL) with linear variable doping (LVD) and further research on the TSL LVD with a multiple step field plate (MSFP), a breakdown voltage (BV) model is proposed and experimentally verified in this paper. With the two-dimensional Poisson equation of the silicon on insulator (SOI) device, the lateral electric field in drift region of the thin silicon layer is assumed to be constant. For the SOI device with LVD in the thin silicon layer, the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field (ENDIF), from which the reduced surface field (RESURF) condition is deduced. The drain in the centre of the device has a good self-isolation effect, but the problem of the high voltage interconnection (HVI) line will become serious. The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device. Based on this model, the TSL LVD SOI n-channel lateral double-diffused MOSFET (nLDMOS) with MSFP is realized. The experimental breakdown voltage (BV) and specific on-resistance (Ron, sp) of the TSL LVD SOI device are 694 V and 21.3 Ω · mm2 with a drift region length of 60 μm, buried oxide layer of 3 μm, and silicon layer of 0.15 μm, respectively.

Key words: breakdown voltage model, enhanced dielectric layer field, thin silicon layer, linear variable doping, multiple step field plates

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.30.Tv (Field effect devices) 85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices)) 84.30.Jc (Power electronics; power supply circuits)