Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor

doi:10.1088/1674-1056/22/11/117307

中国物理B ›› 2013, Vol. 22 ›› Issue (11): 117307-117307.doi: 10.1088/1674-1056/22/11/117307

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor

赵胜雷^a, 陈伟伟^b, 岳童^a, 王毅^a, 罗俊^a, 毛维^a, 马晓华^{a b}, 郝跃^a

a Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;
b School of Technical Physics, Xidian University, Xi’an 710071, China

收稿日期:2013-03-26 修回日期:2013-04-22 出版日期:2013-09-28 发布日期:2013-09-28
基金资助:
Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915) and the National Natural Science Foundation of China (Grant No. 61204085).

Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor

Zhao Sheng-Lei (赵胜雷)^a, Chen Wei-Wei (陈伟伟)^b, Yue Tong (岳童)^a, Wang Yi (王毅)^a, Luo Jun (罗俊)^a, Mao Wei (毛维)^a, Ma Xiao-Hua (马晓华)^{a b}, Hao Yue (郝跃)^a

a Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;
b School of Technical Physics, Xidian University, Xi’an 710071, China

Received:2013-03-26 Revised:2013-04-22 Online:2013-09-28 Published:2013-09-28
Contact: Ma Xiao-Hua E-mail:xhma@xidian.edu.cn
Supported by:
Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915) and the National Natural Science Foundation of China (Grant No. 61204085).

摘要/Abstract

摘要： In this paper, the influence of a drain field plate (FP) on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor (HEMT) is investigated. The HEMT with only a gate FP is optimized, and breakdown voltage V_BR is saturated at 1085 V for gate–drain spacing L_GD ≥ 8 μm. On the basis of the HEMT with a gate FP, a drain FP is added with L_GD=10 μm. For the length of the drain FP L_DF ≤ 2 μm, V_BR is almost kept at 1085 V, showing no degradation. When L_DF exceeds 2 μm, V_BR decreases obviously as L_DF increases. Moreover, the larger the L_DF, the larger the decrease of V_BR. It is concluded that the distance between the gate edge and the drain FP edge should be larger than a certain value to prevent the drain FP from affecting the forward blocking voltage and the value should be equal to the L_GD at which V_BR begins to saturate in the first structure. The electric field and potential distribution are simulated and analyzed to account for the decrease of V_BR.

关键词: AlGaN/GaN high electron mobility transistor, forward blocking voltage, drain field plate

Abstract: In this paper, the influence of a drain field plate (FP) on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor (HEMT) is investigated. The HEMT with only a gate FP is optimized, and breakdown voltage V_BR is saturated at 1085 V for gate–drain spacing L_GD ≥ 8 μm. On the basis of the HEMT with a gate FP, a drain FP is added with L_GD=10 μm. For the length of the drain FP L_DF ≤ 2 μm, V_BR is almost kept at 1085 V, showing no degradation. When L_DF exceeds 2 μm, V_BR decreases obviously as L_DF increases. Moreover, the larger the L_DF, the larger the decrease of V_BR. It is concluded that the distance between the gate edge and the drain FP edge should be larger than a certain value to prevent the drain FP from affecting the forward blocking voltage and the value should be equal to the L_GD at which V_BR begins to saturate in the first structure. The electric field and potential distribution are simulated and analyzed to account for the decrease of V_BR.

Key words: AlGaN/GaN high electron mobility transistor, forward blocking voltage, drain field plate

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

73.61.Ey (III-V semiconductors) 78.30.Fs (III-V and II-VI semiconductors)

赵胜雷, 陈伟伟, 岳童, 王毅, 罗俊, 毛维, 马晓华, 郝跃. Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor[J]. 中国物理B, 2013, 22(11): 117307-117307.

Zhao Sheng-Lei (赵胜雷), Chen Wei-Wei (陈伟伟), Yue Tong (岳童), Wang Yi (王毅), Luo Jun (罗俊), Mao Wei (毛维), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor[J]. Chin. Phys. B, 2013, 22(11): 117307-117307.

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Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor

Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor

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