4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination

doi:10.1088/1674-1056/23/5/057102

中国物理B ›› 2014, Vol. 23 ›› Issue (5): 57102-057102.doi: 10.1088/1674-1056/23/5/057102

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination

袁昊^a, 汤晓燕^a, 张义门^a, 张玉明^a, 宋庆文^b, 杨霏^c, 吴昊^c

a School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
c The National Smart Grid Research Institute, Beijing 102200, China

收稿日期:2013-07-18 修回日期:2013-11-25 出版日期:2014-05-15 发布日期:2014-05-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61234006 and 61274079), the Key Specific Projects of Ministry of Education of China (Grant No. 625010101), and the Science Project of State Grid, China (Grant No. SGRI-WD-71-13-004).

4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination

Yuan Hao (袁昊)^a, Tang Xiao-Yan (汤晓燕)^a, Zhang Yi-Men (张义门)^a, Zhang Yu-Ming (张玉明)^a, Song Qing-Wen (宋庆文)^b, Yang Fei (杨霏)^c, Wu Hao (吴昊)^c

a School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
c The National Smart Grid Research Institute, Beijing 102200, China

Received:2013-07-18 Revised:2013-11-25 Online:2014-05-15 Published:2014-05-15
Contact: Song Qing-Wen E-mail:qwsong@xidian.edu.cn
About author:71.20.Nr; 73.40.Sx; 77.22.Jp
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61234006 and 61274079), the Key Specific Projects of Ministry of Education of China (Grant No. 625010101), and the Science Project of State Grid, China (Grant No. SGRI-WD-71-13-004).

摘要/Abstract

摘要： Based on the theoretical analysis of the 4H-SiC Schottky-barrier diodes (SBDs) with field plate termination, 4H-SiC SBD with semi-insulating polycrystalline silicon (SIPOS) FP termination has been fabricated. The relative dielectric constant of the SIPOS dielectric first used in 4H-SiC devices is 10.4, which is much higher than that of the SiO₂ dielectric, leading to benefitting the performance of devices. The breakdown voltage of the fabricated SBD could reach 1200 V at leakage current 20 uA, about 70% of the theoretical breakdown voltage. Meanwhile, both of the simulation and experimental results show that the length of the SIPOS FP termination is an important factor for structure design.

关键词: 4H-SiC, Schottky-barrier diodes, semi-insulating polycrystalline silicon, field plates termination

Abstract: Based on the theoretical analysis of the 4H-SiC Schottky-barrier diodes (SBDs) with field plate termination, 4H-SiC SBD with semi-insulating polycrystalline silicon (SIPOS) FP termination has been fabricated. The relative dielectric constant of the SIPOS dielectric first used in 4H-SiC devices is 10.4, which is much higher than that of the SiO₂ dielectric, leading to benefitting the performance of devices. The breakdown voltage of the fabricated SBD could reach 1200 V at leakage current 20 uA, about 70% of the theoretical breakdown voltage. Meanwhile, both of the simulation and experimental results show that the length of the SIPOS FP termination is an important factor for structure design.

Key words: 4H-SiC, Schottky-barrier diodes, semi-insulating polycrystalline silicon, field plates termination

中图分类号: (Semiconductor compounds)

71.20.Nr

73.40.Sx (Metal-semiconductor-metal structures) 77.22.Jp (Dielectric breakdown and space-charge effects)

袁昊, 汤晓燕, 张义门, 张玉明, 宋庆文, 杨霏, 吴昊. 4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination[J]. 中国物理B, 2014, 23(5): 57102-057102.

Yuan Hao (袁昊), Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Song Qing-Wen (宋庆文), Yang Fei (杨霏), Wu Hao (吴昊). 4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination[J]. Chin. Phys. B, 2014, 23(5): 57102-057102.

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4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination

4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination

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