中国物理B ›› 2018, Vol. 27 ›› Issue (6): 67402-067402.doi: 10.1088/1674-1056/27/6/067402

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Enhancement of off-state characteristics in junctionless field effect transistor using a field plate

Bin Wang(王斌), He-Ming Zhang(张鹤鸣), Hui-Yong Hu(胡辉勇), Xiao-Wei Shi(史小卫)   

  1. 1 State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
    2 State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2017-10-27 修回日期:2018-03-30 出版日期:2018-06-05 发布日期:2018-06-05
  • 通讯作者: Bin Wang E-mail:wbin@xidian.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No.61704130),the Fundamental Research Funds for the Central Universities,China (Grant No.20101166085) and the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology from Institute of Microelectronics,Chinese Academy of Sciences (Grant No.90109162905).

Enhancement of off-state characteristics in junctionless field effect transistor using a field plate

Bin Wang(王斌)1, He-Ming Zhang(张鹤鸣)2, Hui-Yong Hu(胡辉勇)2, Xiao-Wei Shi(史小卫)1   

  1. 1 State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
    2 State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2017-10-27 Revised:2018-03-30 Online:2018-06-05 Published:2018-06-05
  • Contact: Bin Wang E-mail:wbin@xidian.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No.61704130),the Fundamental Research Funds for the Central Universities,China (Grant No.20101166085) and the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology from Institute of Microelectronics,Chinese Academy of Sciences (Grant No.90109162905).

摘要: In this paper, a novel junctionless field effect transistor (JLFET) is proposed. In the presence of a field plate between gate and drain, the gate-induced drain leakage (GIDL) effect is suppressed due to the decrease of lateral band-to-band tunneling probability. Thus, the off-state current Ioff, which is mainly provided by the GIDL current, is reduced. Sentaurus simulation shows that the Ioff of the new optimized JLFET is reduced by~2 orders and its sub-threshold swing can reach 76.8 mV/decade with little influence on its on-state current Ion, so its Ion/Ioff ratio is improved by 2 orders of magnitude compared with that of the normal JLFET. Optimization of device parameters such as Φfps (the work difference between field plate and substrate) and LFP (the length of field plate), is also discussed in detail.

关键词: lateral band to band tunneling, GIDL, off-state current, field plate

Abstract: In this paper, a novel junctionless field effect transistor (JLFET) is proposed. In the presence of a field plate between gate and drain, the gate-induced drain leakage (GIDL) effect is suppressed due to the decrease of lateral band-to-band tunneling probability. Thus, the off-state current Ioff, which is mainly provided by the GIDL current, is reduced. Sentaurus simulation shows that the Ioff of the new optimized JLFET is reduced by~2 orders and its sub-threshold swing can reach 76.8 mV/decade with little influence on its on-state current Ion, so its Ion/Ioff ratio is improved by 2 orders of magnitude compared with that of the normal JLFET. Optimization of device parameters such as Φfps (the work difference between field plate and substrate) and LFP (the length of field plate), is also discussed in detail.

Key words: lateral band to band tunneling, GIDL, off-state current, field plate

中图分类号:  (Tunneling phenomena: single particle tunneling and STM)

  • 74.55.+v
85.30.Tv (Field effect devices) 85.30.De (Semiconductor-device characterization, design, and modeling)