中国物理B ›› 2018, Vol. 27 ›› Issue (6): 67402-067402.doi: 10.1088/1674-1056/27/6/067402
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Bin Wang(王斌), He-Ming Zhang(张鹤鸣), Hui-Yong Hu(胡辉勇), Xiao-Wei Shi(史小卫)
Bin Wang(王斌)1, He-Ming Zhang(张鹤鸣)2, Hui-Yong Hu(胡辉勇)2, Xiao-Wei Shi(史小卫)1
摘要: In this paper, a novel junctionless field effect transistor (JLFET) is proposed. In the presence of a field plate between gate and drain, the gate-induced drain leakage (GIDL) effect is suppressed due to the decrease of lateral band-to-band tunneling probability. Thus, the off-state current Ioff, which is mainly provided by the GIDL current, is reduced. Sentaurus simulation shows that the Ioff of the new optimized JLFET is reduced by~2 orders and its sub-threshold swing can reach 76.8 mV/decade with little influence on its on-state current Ion, so its Ion/Ioff ratio is improved by 2 orders of magnitude compared with that of the normal JLFET. Optimization of device parameters such as Φfps (the work difference between field plate and substrate) and LFP (the length of field plate), is also discussed in detail.
中图分类号: (Tunneling phenomena: single particle tunneling and STM)