Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models

doi:10.1088/1674-1056/26/10/108503

中国物理B ›› 2017, Vol. 26 ›› Issue (10): 108503-108503.doi: 10.1088/1674-1056/26/10/108503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models

Yan Zeng(曾严), Xiao-Jin Li(李小进), Jian Qing(卿健), Ya-Bin Sun(孙亚宾), Yan-Ling Shi(石艳玲), Ao Guo(郭奥), Shao-Jian Hu(胡少坚)

1. Shanghai Key Laboratory of Multidimensional Information Processing and Department of Electrical Engineering, East China Normal University, Shanghai 200241, China;
2. Shanghai Integrated Circuit Research & Development Center, Shanghai 201203, China

收稿日期:2017-06-04 修回日期:2017-06-26 出版日期:2017-10-05 发布日期:2017-10-05
通讯作者: Xiao-Jin Li, Xiao-Jin Li E-mail:xjli@ee.ecnu.edu.cn;ybsun@ee.ecnu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61574056 and 61204038), the Natural Science Funds of Shanghai, China (Grant No. 14ZR1412000), the Fund from the Science and Technology Commission of Shanghai Municipality (Grant No. 14DZ2260800), and Shanghai Sailing Program (Grant No. 17YF1404700).

Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models

Yan Zeng(曾严)¹, Xiao-Jin Li(李小进)¹, Jian Qing(卿健)¹, Ya-Bin Sun(孙亚宾)¹, Yan-Ling Shi(石艳玲)¹, Ao Guo(郭奥)², Shao-Jian Hu(胡少坚)²

1. Shanghai Key Laboratory of Multidimensional Information Processing and Department of Electrical Engineering, East China Normal University, Shanghai 200241, China;
2. Shanghai Integrated Circuit Research & Development Center, Shanghai 201203, China

Received:2017-06-04 Revised:2017-06-26 Online:2017-10-05 Published:2017-10-05
Contact: Xiao-Jin Li, Xiao-Jin Li E-mail:xjli@ee.ecnu.edu.cn;ybsun@ee.ecnu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61574056 and 61204038), the Natural Science Funds of Shanghai, China (Grant No. 14ZR1412000), the Fund from the Science and Technology Commission of Shanghai Municipality (Grant No. 14DZ2260800), and Shanghai Sailing Program (Grant No. 17YF1404700).

摘要/Abstract

摘要： The impact of negative bias temperature instability (NBTI) can be ascribed to three mutually uncorrelated factors, including hole trapping by pre-existing traps (△ V_HT) in gate insulator, generated traps (△ V_OT) in bulk insulator, and interface trap generation (△ V_IT). In this paper, we have experimentally investigated the NBTI characteristic for a 40-nm complementary metal-oxide semiconductor (CMOS) process. The power-law time dependence, temperature activation, and field acceleration have also been explored based on the physical reaction-diffusion model. Moreover, the end-of-life of stressed device dependent on the variation of stress field and temperature have been evaluated. With the consideration of locking effect, the recovery characteristics have been modelled and discussed.

关键词: negative bias temperature instability (NBTI), reaction diffusion (RD), interface trap, H₂ locking effect

Abstract: The impact of negative bias temperature instability (NBTI) can be ascribed to three mutually uncorrelated factors, including hole trapping by pre-existing traps (△ V_HT) in gate insulator, generated traps (△ V_OT) in bulk insulator, and interface trap generation (△ V_IT). In this paper, we have experimentally investigated the NBTI characteristic for a 40-nm complementary metal-oxide semiconductor (CMOS) process. The power-law time dependence, temperature activation, and field acceleration have also been explored based on the physical reaction-diffusion model. Moreover, the end-of-life of stressed device dependent on the variation of stress field and temperature have been evaluated. With the consideration of locking effect, the recovery characteristics have been modelled and discussed.

Key words: negative bias temperature instability (NBTI), reaction diffusion (RD), interface trap, H₂ locking effect

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

77.55.df (For silicon electronics) 66.30.J- (Diffusion of impurities ?)

曾严, 李小进, 卿健, 孙亚宾, 石艳玲, 郭奥, 胡少坚. Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models[J]. 中国物理B, 2017, 26(10): 108503-108503.

Yan Zeng(曾严), Xiao-Jin Li(李小进), Jian Qing(卿健), Ya-Bin Sun(孙亚宾), Yan-Ling Shi(石艳玲), Ao Guo(郭奥), Shao-Jian Hu(胡少坚). Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models[J]. Chin. Phys. B, 2017, 26(10): 108503-108503.

参考文献 23

[1]	Tang H L, Xu B L, Zhuang Y Q, Zhang L and Li C 2016 Acta Phys. Sin. 65 168502(in Chinese)
[2]	Krishnan A T, Reddy V, Chakravarthi S, Rodriguez J, John S and Krishnan S 2003 IEEE International Electron Devices Meeting, 8-10 December, 2003, p. 14.5.1
[3]	Liu H X and Hao Y 2016 Chin. Phys. 16 2111
[4]	Cao Y R, Ma X H, Hao Y and Hu S G 2010 Chin. Phys. B 19 047307
[5]	Joshi K, Mukhopadhyay S, Goel N and Mahapatra S 2012 IEEE International Reliability Physics Symposium, 15-19 April, 2012, p. 5A.3.1
[6]	Mahapatra S (ed.) 2016 Fundamentals of Bias Temperature Instability in MOS Transistors (New Delhi:Springer) pp. 209-263
[7]	Goel N, Joshi K, Mukhopadhyay S, Nanaware N and Mahapatra S 2014 Microelectron. Rel. 54 491
[8]	Mahapatra S, Goel N, Desai S, Gupta S, Jose B, Mukhopadhyay S, Joshi K, Jain A, Islam A E and Alam M A 2013 IEEE Trans. Electron Dev. 60 901
[9]	Parihar N, Goel N, Chaudhary A and Mahapatra S 2016 IEEE Trans. Electron Dev. 63 946
[10]	Mahapatra S, Islam A, Deora S, Maheta V, Joshi K, Jain A and Alam M, 2011 International Reliability Physics Symposium, 10-14 April, 2011, p. 6A.3.1
[11]	Desai S, Mukhopadhyay S, Goel N, Nanaware N, Jose B, Joshi K and Mahapatra S 2013 IEEE International Reliability Physics Symposium, 14-18 April, 2013, p. XT.2.1
[12]	Yoshiki Y 2014 Microelectron. Rel. 54 520
[13]	Krishnan A T, Chancellor C, Chakravarthi S, Nicollian P E, Reddy V, Varghese A, Khamankar R B and Krishnan S 2005 IEEE International Electron Devices Meeting Technical Digest, 5-7 December, 2005, p. 691
[14]	Joshi K, Mukhopadhyay S, Goel N, Nanware N and Mahapatra S 2014 IEEE Trans. Electron Dev. 61 408
[15]	Mahapatra S (ed.) 2016 Fundamentals of Bias Temperature Instability in MOS Transistors (New Delhi:Springer), pp. 127-179
[16]	Mahapatra S, Kumar P B and Alam M A 2004 IEEE Trans. Electron Dev. 51 1371
[17]	Mahapatra S, Huard V, Kerber A, Reddy V, Kalpat S and Haggag A 2014 IEEE International Reliability Physics Symposium Proceedings, 1-5 June, 2014, p. 3B.1.1
[18]	Nozomu K, Yasuhiro D and Nobuyuki W 2009 Microelectron. Rel. 49 989
[19]	Rangan S, Mielke N and Yeh E C C 2003 IEEE International Electron Devices Meeting Technical Digest, 8-10 December, 2003, p. 14.3.1
[20]	Deora S, Maheta V, Islam A, Alam M, and Mahapatra S 2009 IEEE Electron Dev. Lett. 30 978
[21]	Cao Y R, Yang Y, Cao C, He W L, Zheng X F, Ma X H and Hao Y 2015 Chin. Phys. B 24 097304
[22]	Kumar S V, Kim C H, Sapatnekar S S 2009 IEEE Trans. Dev. Mater. Rel. 9 537
[23]	Goel N, Naphade T and Mahapatra S 2015 IEEE International Reliability Physics Symposium, 19-23 April, 2015, p. 4A.3.1

Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models

Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models

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