Double-gate-all-around tunnel field-effect transistor

doi:10.1088/1674-1056/26/7/078502

中国物理B ›› 2017, Vol. 26 ›› Issue (7): 78502-078502.doi: 10.1088/1674-1056/26/7/078502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Double-gate-all-around tunnel field-effect transistor

Wen-Hao Zhang(张文豪), Zun-Chao Li(李尊朝), Yun-He Guan(关云鹤), Ye-Fei Zhang(张也非)

1 School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China;
2 Guangdong Xi'an Jiaotong University Academy, Shunde 528300, China

收稿日期:2017-01-18 修回日期:2017-04-06 出版日期:2017-07-05 发布日期:2017-07-05
通讯作者: Zun-Chao Li E-mail:zcli@mail.xjtu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos.61176038 and 61474093),the Science and Technology Planning Project of Guangdong Province,China (Grant No.2015A010103002),and the Technology Development Program of Shanxi Province,China (Grant No.2016GY075).

Double-gate-all-around tunnel field-effect transistor

Wen-Hao Zhang(张文豪)¹, Zun-Chao Li(李尊朝)^1,2, Yun-He Guan(关云鹤)¹, Ye-Fei Zhang(张也非)¹

1 School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China;
2 Guangdong Xi'an Jiaotong University Academy, Shunde 528300, China

Received:2017-01-18 Revised:2017-04-06 Online:2017-07-05 Published:2017-07-05
Contact: Zun-Chao Li E-mail:zcli@mail.xjtu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos.61176038 and 61474093),the Science and Technology Planning Project of Guangdong Province,China (Grant No.2015A010103002),and the Technology Development Program of Shanxi Province,China (Grant No.2016GY075).

摘要/Abstract

摘要：

In this work, a double-gate-all-around tunneling field-effect transistor is proposed. The performance of the novel device is studied by numerical simulation. The results show that with a thinner body and an additional core gate, the novel device achieves a steeper subthreshold slope, less susceptibility to the short channel effect, higher on-state current, and larger on/off current ratio than the traditional gate-all-around tunneling field-effect transistor. The excellent performance makes the proposed structure more attractive to further dimension scaling.

关键词: gate-all-around (GAA), tunnel field effect transistor (TFET), drain induced barrier thinning (DIBT)

Abstract:

Key words: gate-all-around (GAA), tunnel field effect transistor (TFET), drain induced barrier thinning (DIBT)

中图分类号: (Junction breakdown and tunneling devices (including resonance tunneling devices))

85.30.Mn

85.30.Tv (Field effect devices) 85.30.De (Semiconductor-device characterization, design, and modeling)

张文豪, 李尊朝, 关云鹤, 张也非. Double-gate-all-around tunnel field-effect transistor[J]. 中国物理B, 2017, 26(7): 78502-078502.

Wen-Hao Zhang(张文豪), Zun-Chao Li(李尊朝), Yun-He Guan(关云鹤), Ye-Fei Zhang(张也非). Double-gate-all-around tunnel field-effect transistor[J]. Chin. Phys. B, 2017, 26(7): 78502-078502.

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