Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source

doi:10.1088/1674-1056/ab7d99

中国物理B ›› 2020, Vol. 29 ›› Issue (5): 58501-058501.doi: 10.1088/1674-1056/ab7d99

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source

Zhijun Lyu(吕智军), Hongliang Lu(吕红亮), Yuming Zhang(张玉明), Yimen Zhang(张义门), Bin Lu(芦宾), Yi Zhu(朱翊), Fankang Meng(孟凡康), Jiale Sun(孙佳乐)

1 The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 School of Physics and Information Engineering, Shanxi Normal University, Linfen 041004, China

收稿日期:2019-12-23 修回日期:2020-02-05 出版日期:2020-05-05 发布日期:2020-05-05
通讯作者: Hongliang Lu E-mail:hllv@mail.xidian.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 90304190002).

Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source

Zhijun Lyu(吕智军)¹, Hongliang Lu(吕红亮)¹, Yuming Zhang(张玉明)¹, Yimen Zhang(张义门)¹, Bin Lu(芦宾)², Yi Zhu(朱翊)¹, Fankang Meng(孟凡康)¹, Jiale Sun(孙佳乐)¹

1 The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 School of Physics and Information Engineering, Shanxi Normal University, Linfen 041004, China

Received:2019-12-23 Revised:2020-02-05 Online:2020-05-05 Published:2020-05-05
Contact: Hongliang Lu E-mail:hllv@mail.xidian.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 90304190002).

摘要/Abstract

摘要： A novel vertical graded source tunnel field-effect transistor (VGS-TFET) is proposed to improve device performance. By introducing a source with linearly graded component, the on-state current increases by more than two decades higher than that of the conventional GaAs TFETs without sacrificing the subthreshold swing (SS) due to the improved band-to-band tunneling efficiency. Compared with the conventional TFETs, much larger drive current range can be achieved by the proposed VGS-TFET with SS below the thermionic limitation of 60 mV/dec. Furthermore, the minimum SS about 20 mV/dec indicates its promising potential for further ultralow power applications.

关键词: vertical graded source, band-to-band tunneling (BTBT), tunnel field-effect transistor (TFET)

Abstract: A novel vertical graded source tunnel field-effect transistor (VGS-TFET) is proposed to improve device performance. By introducing a source with linearly graded component, the on-state current increases by more than two decades higher than that of the conventional GaAs TFETs without sacrificing the subthreshold swing (SS) due to the improved band-to-band tunneling efficiency. Compared with the conventional TFETs, much larger drive current range can be achieved by the proposed VGS-TFET with SS below the thermionic limitation of 60 mV/dec. Furthermore, the minimum SS about 20 mV/dec indicates its promising potential for further ultralow power applications.

Key words: vertical graded source, band-to-band tunneling (BTBT), tunnel field-effect transistor (TFET)

中图分类号: (Junction breakdown and tunneling devices (including resonance tunneling devices))

85.30.Mn

81.05.Ea (III-V semiconductors) 85.30.Tv (Field effect devices)

吕智军, 吕红亮, 张玉明, 张义门, 芦宾, 朱翊, 孟凡康, 孙佳乐. Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source[J]. 中国物理B, 2020, 29(5): 58501-058501.

Zhijun Lyu(吕智军), Hongliang Lu(吕红亮), Yuming Zhang(张玉明), Yimen Zhang(张义门), Bin Lu(芦宾), Yi Zhu(朱翊), Fankang Meng(孟凡康), Jiale Sun(孙佳乐). Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source[J]. Chin. Phys. B, 2020, 29(5): 58501-058501.

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Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source

Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source

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