Design and investigation of dopingless double-gate line tunneling transistor: Analog performance, linearity, and harmonic distortion analysis

doi:10.1088/1674-1056/ab9c06

中国物理B ›› 2020, Vol. 29 ›› Issue (10): 108502-.doi: 10.1088/1674-1056/ab9c06

Hui-Fang Xu(许会芳)¹^,†(), Xin-Feng Han(韩新风)¹, Wen Sun(孙雯)¹

收稿日期:2020-04-13 修回日期:2020-05-20 接受日期:2020-06-12 出版日期:2020-10-05 发布日期:2020-10-05
通讯作者: Hui-Fang Xu(许会芳)

Design and investigation of dopingless double-gate line tunneling transistor: Analog performance, linearity, and harmonic distortion analysis

Hui-Fang Xu(许会芳)†, Xin-Feng Han(韩新风), and Wen Sun(孙雯)

¹ Institute of Electrical and Electronic Engineering, Anhui Science and Technology University, Fengyang 233100, China

Received:2020-04-13 Revised:2020-05-20 Accepted:2020-06-12 Online:2020-10-05 Published:2020-10-05
Contact: ^†Corresponding author. E-mail: xu0342@163.com
About author:
†Corresponding author. E-mail: xu0342@163.com
* Project supported by the Natural Science Research Key Project of Universities of Anhui Province, China (Grant No. KJ2017A502), the Introduced Talent Project of Anhui Science and Technology University, China (Grant No. DQYJ201603), and the Excellent Talents Supported Project of Colleges and Universities, China (Grant No. gxyq2018048).

摘要/Abstract

Abstract:

The tunnel field-effect transistor (TFET) is proposed by using the advantages of dopingless and line-tunneling technology. The line tunneling is created due to the fact that the gate electric field is aligned with the tunneling direction, which dramatically enhances tunneling area and tunneling current. Moreover, the effects of the structure parameters such as the length between top gate and source electrode, the length between top gate and drain electrode, the distance between bottom gate and drain electrode, and the metal position on the on-state current, electric field and energy band are investigated and optimized. In addition, analog/radio-frequency performance and linearity characteristics are studied. All results demonstrate that the proposed device not only enhances the on/of current ratio and reduces the subthreshold swing, but also offers eight times improvement in cut-off frequency and gain band product as compared with the conventional point tunneling dopingless TFET, at the same time; it shows better linearity and small distortions. This proposed device greatly enhances the potential of applications in dopingless TFET.

Key words: dopingless tunnel field effect transistor, line tunneling, linearity parameters

中图分类号: (Junction breakdown and tunneling devices (including resonance tunneling devices))

85.30.Mn

81.05.Ea (III-V semiconductors) 85.30.Tv (Field effect devices)

Hui-Fang Xu(许会芳), Xin-Feng Han(韩新风), Wen Sun(孙雯). [J]. 中国物理B, 2020, 29(10): 108502-.

Hui-Fang Xu(许会芳)†, Xin-Feng Han(韩新风), and Wen Sun(孙雯). Design and investigation of dopingless double-gate line tunneling transistor: Analog performance, linearity, and harmonic distortion analysis[J]. Chin. Phys. B, 2020, 29(10): 108502-.

图/表 15

参考文献 33

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Parameter	Symbol	PT₋DLTFET	LT₋DLTFET	M₋LT₋DLTFET
Top gate length	L_TG	55 nm	55 nm	55 nm
Bottom gate length	L_BG	55 nm	50 nm	50 nm
Source length	L_S	20 nm	20 nm	20 nm
Drain length	L_D	20 nm	20 nm	20 nm
Distance between top gate and source electrode	L_TGS	5 nm	5 nm	5 nm
Distance between top gate and drain electrode	L_TGD	10 nm	10 nm	10 nm
Distance between bottom gate and drain electrode	L_BGD	10 nm	20 nm	20 nm
Oxide layer thickness	T_OX	3 nm	3 nm	3 nm
Ge body thickness	T_Ge	10 nm	10 nm	10 nm
Top gate work function	WK_TG	4.2 eV	3.9 eV	3.9 eV
Bottom gate work function	WK_BG	4.2 eV	4.6 eV	4.6 eV
Metal work function	WK_M			3.9 eV
Source electrode work function	WK_S	5.9 eV	5.9 eV	5.9 eV
Drain electrode work function	WK_D	3.9 eV	3.9 eV	3.9 eV

Parameter	PT_DLTFET	LT_DLTFET	M_LT_DLTFET
I_on/(A/μm)	1.90117×10⁻⁶	4.44004×10⁻⁶	1.14652×10⁻⁵
I_on/I_off	4.19×10⁸	9.81×10⁸	1.48×10⁹
I_amb/(A/μm)	5.01×10⁻¹⁵	4.69×10⁻¹⁵	4.67×10⁻¹⁵
SS_avg/(mV/dec)	72.52	44.07	34.15
SS_min/(mV/dec)	27.47	29.36	26.23
V_th/V	0.34	0.2	0.16

Design and investigation of dopingless double-gate line tunneling transistor: Analog performance, linearity, and harmonic distortion analysis

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