Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages

doi:10.1088/1674-1056/26/7/078503

中国物理B ›› 2017, Vol. 26 ›› Issue (7): 78503-078503.doi: 10.1088/1674-1056/26/7/078503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages

Muna E. Raypah, Mutharasu Devarajan, Fauziah Sulaiman

School of Physics, Universiti Sains Malaysia(USM), Penang 11800, Malaysia

收稿日期:2017-01-20 修回日期:2017-03-07 出版日期:2017-07-05 发布日期:2017-07-05
通讯作者: Muna E. Raypah E-mail:muna.ezzi@gmail.com,moni.ezzi@yahoo.com

Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages

Muna E. Raypah, Mutharasu Devarajan, Fauziah Sulaiman

School of Physics, Universiti Sains Malaysia(USM), Penang 11800, Malaysia

Received:2017-01-20 Revised:2017-03-07 Online:2017-07-05 Published:2017-07-05
Contact: Muna E. Raypah E-mail:muna.ezzi@gmail.com,moni.ezzi@yahoo.com

摘要/Abstract

摘要： The relationship between the photometric, electric, and thermal parameters of light-emitting diodes (LEDs) is important for optimizing the LED illumination design. Indium gallium aluminium phosphide (InGaAlP)-based thin-film surface-mounted device (SMD) LEDs have attracted wide attention in research and development due to their portability and miniaturization. We report the optical characterization of InGaAlP thin-film SMD LED mounted on FR4, 2 W, and 5 W aluminum (Al) packages. The optical and thermal parameters of LED are determined at different injection currents and ambient temperatures by combining the T3ster (thermal transient tester) and TeraLED (thermal and radiometric characterization of power LEDs) systems. Analysis shows that LED on a 5 W Al substrate package obtains the highest luminous and optical efficiency.

关键词: light-emitting diodes (LEDs), surface-mounted device (SMD), InGaAlP, luminous efficiency

Abstract: The relationship between the photometric, electric, and thermal parameters of light-emitting diodes (LEDs) is important for optimizing the LED illumination design. Indium gallium aluminium phosphide (InGaAlP)-based thin-film surface-mounted device (SMD) LEDs have attracted wide attention in research and development due to their portability and miniaturization. We report the optical characterization of InGaAlP thin-film SMD LED mounted on FR4, 2 W, and 5 W aluminum (Al) packages. The optical and thermal parameters of LED are determined at different injection currents and ambient temperatures by combining the T3ster (thermal transient tester) and TeraLED (thermal and radiometric characterization of power LEDs) systems. Analysis shows that LED on a 5 W Al substrate package obtains the highest luminous and optical efficiency.

Key words: light-emitting diodes (LEDs), surface-mounted device (SMD), InGaAlP, luminous efficiency

中图分类号: (Light-emitting devices)

85.60.Jb

61.82.Fk (Semiconductors) 81.05.Ea (III-V semiconductors) 81.70.Pg (Thermal analysis, differential thermal analysis (DTA), differential thermogravimetric analysis)

Muna E. Raypah,Mutharasu Devarajan,Fauziah Sulaiman. Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages[J]. 中国物理B, 2017, 26(7): 78503-078503.

Muna E. Raypah, Mutharasu Devarajan, Fauziah Sulaiman. Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages[J]. Chin. Phys. B, 2017, 26(7): 78503-078503.

参考文献 49

[1]	Gessmann T and Schubert E F 2004 J. Appl. Phys. 95 2203
[2]	Windisch R, Altieri P, Butendeich R, Illek S, Stauss P, Stein W, Wegleiter W, Wirth R, Zull H and Streubel K 2004 Proceedings of the SPIE on Light-Emitting Diodes:Research, Manufacturing and Applications VIII, June 21, 2004, California, United States, pp. 43–52
[3]	Ortega A and Silva I 2008 Int. J. Automot. Technol. 9 203
[4]	Lin J (U.S. Patent) 10 662 289[2003-09-16]
[5]	Rao F, Ge Z C and Zhu J L 2012 Adv. Mater. Res. 347 310
[6]	Gu Y, Narendran N and Freyssinier J P 2004 Proceedings of the 4th International Conference on Solid State Lighting, October 20, 2004, 119-24
[7]	Garcia J, Dalla-Costa M A, Cardesin J, Alonso J M and Rico-Secades M 2009 IEEE Trans. Power Electron. 24 1107
[8]	Farkas G, Poppe A, Schanda J and Muray K 2004 Proceedings of the CIE LED Conference, CIE x026:2004, Tokyo, Japan, p. 92-5
[9]	Narendran N, Gu Y, Freyssinier J, Yu H and Deng L 2004 J. Cryst. Growth 268 449
[10]	Cheng J H, Liu C K, Chao Y L and Tain R M 2005 Proceedings of the 24th International Conference on Thermoelectrics, June 19–23, 2005, Clemson, SC, p. 53-6
[11]	Garcia J, Lamar D, Dalla-Costa M A, Alonso J and Rico-Secades M 2008 Proceedings of the IEEE Power Electronics Specialists Conference, June 15–19, 2008, Rhodes, Greece, p. 1852-6
[12]	Biber C 2008 Proceedings of the 24th Annual IEEE Semiconductor Thermal Measurement and Management Symposium, March 16–20, 2008, San Jose, CA, p. 180-4
[13]	Hui S, Chen H and Tao X 2012 IEEE Trans. Power Electron. 27 4571
[14]	Schubert E F 2006 Light Emitting Diodes, 2nd edn. (New York:Cambridge University Press) p. 110
[15]	Osram Opto Semiconductors
[16]	International Commission on Illumination
[17]	Székely V r, Poppe A, Rencz M, Rosental M and Teszéri T 2000 Microelectron. Rel. 40 517
[18]	Juntunen E 2014 From LED die to a lighting system:performance improvement in LED lighting by means of thermal management and smart control (Ph.D. Dissertation) (University of Oulu, Finland)
[19]	Ma A C, Wang Y H, Ou J P and Zhou C J 2013 Adv. Mater. Res. 732 161
[20]	Xiong J Y, Zhao F, Fan G H, Xu Y Q, Liu X P, Song J J, Ding B B, Zhang T and Zheng S W 2013 Chin. Phys. B 22 118504
[21]	Xiao-Peng Y, Guang-Han F, Bin-Bin D, Jian-Yong X, Yao X, Tao Z and Shu-Wen Z 2013 Chin. Phys. B 23 028502
[22]	Wang J, Huang X, Liu L, Wu Q, Chu M H, Zhang L G, Hou F Q, Liu X Y, Zhao C J, Fan Y, Luo J S and Jiang D P 2008 Chin. J. Lumin. 29 358
[23]	Keppens A, Ryckaert W, Deconinck G and Hanselaer P 2009 Proceedings of the CIE Conference, May 27–29, 2009, Budapest, Hungary
[24]	Raypah M E, Sodipo B K, Devarajan M and Sulaiman F 2016 IEEE Trans. Electron Devices 63 2790
[25]	Raypah M E, Sodipo B K, Devarajan M and Sulaiman F 2016 IEEE Trans. Electron Devices 63 408
[26]	Chang Y C, Liou J K and Liu W C 2013 IEEE Electron Device Lett. 34 777
[27]	Han N, Kim H G, Kim H Y, Kang J H, Ryu B D, Park Y J, Han M, Jeong H, Chandramohan S and Suh E K 2011 IEEE Electron Device Lett. 32 527
[28]	Bochkareva N, Zhirnov E, Efremov A, Rebane Y T, Gorbunov R and Shreter Y G 2005 Semiconductors 39 594
[29]	Shen Y, Mueller G, Watanabe S, Gardner N, Munkholm A and Krames M 2007 Appl. Phys. Lett. 91 141101
[30]	Son J H, Kim B J, Ryu C J, Song Y H, Lee H K, Choi J W and Lee J L 2012 Opt. Express 20 A287
[31]	Lee Y J, Lee C J and Chen C-H 2010 IEEE J. Quantum Electron. 46 1450
[32]	Chang M H, Das D and Pecht M 2011 Proceedings of the IMAPS Mid-Atlantic Microelectronics Conference, p. 23-4
[33]	Varshni Y P 1967 Physica 34 149
[34]	Xi Y and Schubert E F 2004 Appl. Phys. Lett. 85 2163
[35]	Keppens A, Ryckaert W, Deconinck G and Hanselaer P 2008 J. Appl. Phys. 104 093104
[36]	Kim D S and Han B 2016 J. Appl. Phys. 119 125104
[37]	Chhajed S, Xi Y, Gessmann T, Xi J Q, Shah J M, Kim J K and Schubert E F 2005 Proceedings of the SPIE, Light-Emitting Diodes:Research, Manufacturing and Applications IX, March 25, 2005, California, United States, p. 16-24
[38]	Poppe A, Farkas G and Horváth G 2007 arXiv:0709.1815
[39]	Alexander H, Maximilian S, Liu E and Gordon E 2015 Chin. Phys. B 24 068105
[40]	Siegal B 2003 Measurement of Junction Temperature Confirms Package Thermal Design Laser Focus World 39 S12-4
[41]	Ji P F and Moon C H 2013 Solid-State Electron. 85 1
[42]	Siegal B S 1988 Proceedings of the 4th Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium on SEMI-THERM IV, February 10–12, 1988, California, United States, p. 12-8
[43]	Ding X, Tang Y, Li Z, Chen Q, Li Y and He Y 2015 Int. Commun. Heat Mass Transfer 66 32
[44]	Gardner N, Müller G, Shen Y, Chen G, Watanabe S, Götz W and Krames M 2007 Appl. Phys. Lett. 91 243506
[45]	Kang J M, Kim J W, Choi J H, Kim D H and Kwon H K 2009 Microelectron. Rel. 9 1231
[46]	Meneghini M, Tazzoli A, Mura G, Meneghesso G and Zanoni E 2010 IEEE Trans. Electron Devices 57 108
[47]	Jung E, Ryu J H, Hong C H and Kim H 2011 J. Electrochem. Soc. 158 H132
[48]	Meneghini M, Dal Lago M, Trivellin N, Mura G, Vanzi M, Meneghesso G and Zanoni E 2012 Microelectron. Rel. 52 804
[49]	Song B M, Han B and Lee J H 2013 Microelectron. Rel. 53 435

Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages

Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 49

相关文章 3

Metrics

本文评价

推荐阅读 0

[1]	王燕丽, 李培咸, 许晟瑞, 周小伟, 张心禹, 姜思宇, 黄茹雪, 刘洋, 訾亚丽, 吴金星, 郝跃. Double superlattice structure for improving the performance of ultraviolet light-emitting diodes[J]. 中国物理B, 2019, 28(3): 38502-038502.
[2]	吴奎, 魏同波, 蓝鼎, 郑海洋, 王军喜, 罗毅, 李晋闽. Large-scale SiO₂ photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography[J]. 中国物理B, 2014, 23(2): 28504-028504.
[3]	喻晓鹏, 范广涵, 丁彬彬, 熊建勇, 肖瑶, 张涛, 郑树文. Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer[J]. 中国物理B, 2014, 23(2): 28502-028502.