中国物理B ›› 2021, Vol. 30 ›› Issue (12): 127301-127301.doi: 10.1088/1674-1056/ac0525

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Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy

Xiang-Peng Zhou(周祥鹏)1,3, Hai-Bing Qiu(邱海兵)2,3, Wen-Xian Yang(杨文献)3,†, Shu-Long Lu(陆书龙)3, Xue Zhang(张雪)2,3, Shan Jin(金山)3, Xue-Fei Li(李雪飞)2,3, Li-Feng Bian(边历峰)1,3,‡, and Hua Qin(秦华)3   

  1. 1 School of Microelectronics, University of Science and Technology of China, Hefei 230026, China;
    2 School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China;
    3 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 收稿日期:2021-03-11 修回日期:2021-04-27 接受日期:2021-05-26 出版日期:2021-11-15 发布日期:2021-11-15
  • 通讯作者: Wen-Xian Yang, Li-Feng Bian E-mail:wxyang2014@sinano.ac.cn;lfbian2006@sinano.ac.cn
  • 基金资助:
    Project supported by the National Key R&D Program of China (Grant No. 2018YFB0406600), the National Natural Science Foundation of China (Grant Nos. 61875224, 61804163, and 61827823), Key Laboratory of Microelectronic Devices and Integration Technology, Chinese Academy of Sciences (Grant No. Y9TAQ21), Key Laboratory of Nano-devices and Applications, Chinese Academy of Sciences (Grant No. Y8AAQ21001), and Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology (Grant No. DH202011).

Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy

Xiang-Peng Zhou(周祥鹏)1,3, Hai-Bing Qiu(邱海兵)2,3, Wen-Xian Yang(杨文献)3,†, Shu-Long Lu(陆书龙)3, Xue Zhang(张雪)2,3, Shan Jin(金山)3, Xue-Fei Li(李雪飞)2,3, Li-Feng Bian(边历峰)1,3,‡, and Hua Qin(秦华)3   

  1. 1 School of Microelectronics, University of Science and Technology of China, Hefei 230026, China;
    2 School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China;
    3 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • Received:2021-03-11 Revised:2021-04-27 Accepted:2021-05-26 Online:2021-11-15 Published:2021-11-15
  • Contact: Wen-Xian Yang, Li-Feng Bian E-mail:wxyang2014@sinano.ac.cn;lfbian2006@sinano.ac.cn
  • Supported by:
    Project supported by the National Key R&D Program of China (Grant No. 2018YFB0406600), the National Natural Science Foundation of China (Grant Nos. 61875224, 61804163, and 61827823), Key Laboratory of Microelectronic Devices and Integration Technology, Chinese Academy of Sciences (Grant No. Y9TAQ21), Key Laboratory of Nano-devices and Applications, Chinese Academy of Sciences (Grant No. Y8AAQ21001), and Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology (Grant No. DH202011).

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摘要： AlN/GaN resonant tunneling diodes (RTDs) were grown separately on freestanding GaN (FS-GaN) substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy (PA-MBE). Room temperature negative differential resistance (NDR) was obtained under forward bias for the RTDs grown on FS-GaN substrates, with the peak current densities (Jp) of 175-700 kA/cm2 and peak-to-valley current ratios (PVCRs) of 1.01-1.21. Two resonant peaks were also observed for some RTDs at room temperature. The effects of two types of substrates on epitaxy quality and device performance of GaN-based RTDs were firstly investigated systematically, showing that lower dislocation densities, flatter surface morphology, and steeper heterogeneous interfaces were the key factors to achieving NDR for RTDs.

关键词: resonant tunneling diodes, negative differential resistance, molecular beam epitaxy, III-nitrides

Abstract: AlN/GaN resonant tunneling diodes (RTDs) were grown separately on freestanding GaN (FS-GaN) substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy (PA-MBE). Room temperature negative differential resistance (NDR) was obtained under forward bias for the RTDs grown on FS-GaN substrates, with the peak current densities (Jp) of 175-700 kA/cm2 and peak-to-valley current ratios (PVCRs) of 1.01-1.21. Two resonant peaks were also observed for some RTDs at room temperature. The effects of two types of substrates on epitaxy quality and device performance of GaN-based RTDs were firstly investigated systematically, showing that lower dislocation densities, flatter surface morphology, and steeper heterogeneous interfaces were the key factors to achieving NDR for RTDs.

Key words: resonant tunneling diodes, negative differential resistance, molecular beam epitaxy, III-nitrides

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices)) 85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.))