中国物理B ›› 2017, Vol. 26 ›› Issue (4): 47201-047201.doi: 10.1088/1674-1056/26/4/047201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs

Shaoyan Di(邸绍岩), Lei Shen(沈磊), Zhiyuan Lun(伦志远), Pengying Chang(常鹏鹰), Kai Zhao(赵凯), Tiao Lu(卢朓), Gang Du(杜刚), Xiaoyan Liu(刘晓彦)   

  1. 1 Institute of Microelectronics, Peking University, Beijing 100871, China;
    2 CAPT, HEDPS, IFSA Collaborative Innovation Center of Ministry of Education, LMAM & School of Mathematical Sciences, Peking University, Beijing 100871, China;
    3 School of Information and Communication, Beijing Information Science and Technology University, Beijing 100101, China
  • 收稿日期:2016-11-28 修回日期:2017-01-20 出版日期:2017-04-05 发布日期:2017-04-05
  • 通讯作者: Kai Zhao, Xiaoyan Liu E-mail:k.zhao.chn@gmail.com;xyliu@ime.pku.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61674008, 61421005, and 61404005).

Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs

Shaoyan Di(邸绍岩)1, Lei Shen(沈磊)1, Zhiyuan Lun(伦志远)1, Pengying Chang(常鹏鹰)1, Kai Zhao(赵凯)1,3, Tiao Lu(卢朓)2, Gang Du(杜刚)1, Xiaoyan Liu(刘晓彦)1   

  1. 1 Institute of Microelectronics, Peking University, Beijing 100871, China;
    2 CAPT, HEDPS, IFSA Collaborative Innovation Center of Ministry of Education, LMAM & School of Mathematical Sciences, Peking University, Beijing 100871, China;
    3 School of Information and Communication, Beijing Information Science and Technology University, Beijing 100101, China
  • Received:2016-11-28 Revised:2017-01-20 Online:2017-04-05 Published:2017-04-05
  • Contact: Kai Zhao, Xiaoyan Liu E-mail:k.zhao.chn@gmail.com;xyliu@ime.pku.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61674008, 61421005, and 61404005).

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摘要： The performance of double gate GaSb nMOSFETs with surface orientations of (100) and (111) are compared by deterministically solving the time-dependent Boltzmann transport equation (BTE). Results show that the on-state current of the device with (111) surface orientation is almost three times larger than the (100) case due to the higher injection velocity. Moreover, the scattering rate of the (111) device is slightly lower than that of the (100) device.

关键词: Boltzmann transport equation, GaSb, surface orientation, double gate

Abstract: The performance of double gate GaSb nMOSFETs with surface orientations of (100) and (111) are compared by deterministically solving the time-dependent Boltzmann transport equation (BTE). Results show that the on-state current of the device with (111) surface orientation is almost three times larger than the (100) case due to the higher injection velocity. Moreover, the scattering rate of the (111) device is slightly lower than that of the (100) device.

Key words: Boltzmann transport equation, GaSb, surface orientation, double gate

中图分类号:  (General theory, scattering mechanisms)

  • 72.20.Dp
71.15.-m (Methods of electronic structure calculations) 72.20.-i (Conductivity phenomena in semiconductors and insulators)