中国物理B ›› 2018, Vol. 27 ›› Issue (4): 47209-047209.doi: 10.1088/1674-1056/27/4/047209

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well

Ling Sun(孙令), Lu Wang(王禄), Jin-Lei Lu(鲁金蕾), Jie Liu(刘洁), Jun Fang(方俊), Li-Li Xie(谢莉莉), Zhi-Biao Hao(郝智彪), Hai-Qiang Jia(贾海强), Wen-Xin Wang(王文新), Hong Chen(陈弘)   

  1. 1. Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2. University of Chinese Academy of Sciences, Beijing 100049, China;
    3. Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
  • 收稿日期:2017-12-17 修回日期:2018-02-01 出版日期:2018-04-05 发布日期:2018-04-05
  • 通讯作者: Hong Chen E-mail:hchen@iphy.ac.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 11574362).

Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well

Ling Sun(孙令)1,2, Lu Wang(王禄)1, Jin-Lei Lu(鲁金蕾)1,2, Jie Liu(刘洁)1,2, Jun Fang(方俊)1,2, Li-Li Xie(谢莉莉)3, Zhi-Biao Hao(郝智彪)3, Hai-Qiang Jia(贾海强)1, Wen-Xin Wang(王文新)1, Hong Chen(陈弘)1   

  1. 1. Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2. University of Chinese Academy of Sciences, Beijing 100049, China;
    3. Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
  • Received:2017-12-17 Revised:2018-02-01 Online:2018-04-05 Published:2018-04-05
  • Contact: Hong Chen E-mail:hchen@iphy.ac.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 11574362).

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摘要：

Here in this paper, we report a room-temperature operating infrared photodetector based on the interband transition of an InAsSb/GaSb quantum well. The interband transition energy of 5-nm thick InAs0.91Sb0.09 embedded in the GaSb barrier is calculated to be 0.53 eV (2.35 μm), which makes the absorption range of InAsSb cover an entire range from short-wavelength infrared to long-wavelength infrared spectrum. The fabricated photodetector exhibits a narrow response range from 2.0 μm to 2.3 μm with a peak around 2.1 μm at 300 K. The peak responsivity is 0.4 A/W under -500 -mV applied bias voltage, corresponding to a peak quantum efficiency of 23.8% in the case without any anti-reflection coating. At 300 K, the photodetector exhibits a dark current density of 6.05×10-3 A/cm2 under -400-mV applied bias voltage and 3.25×10-5 A/cm2 under zero, separately. The peak detectivity is 6.91×1010 cm·Hz1/2/W under zero bias voltage at 300 K.

关键词: InAsSb/GaSb quantum well, interband transition, photodetector, room temperature operating

Abstract:

Here in this paper, we report a room-temperature operating infrared photodetector based on the interband transition of an InAsSb/GaSb quantum well. The interband transition energy of 5-nm thick InAs0.91Sb0.09 embedded in the GaSb barrier is calculated to be 0.53 eV (2.35 μm), which makes the absorption range of InAsSb cover an entire range from short-wavelength infrared to long-wavelength infrared spectrum. The fabricated photodetector exhibits a narrow response range from 2.0 μm to 2.3 μm with a peak around 2.1 μm at 300 K. The peak responsivity is 0.4 A/W under -500 -mV applied bias voltage, corresponding to a peak quantum efficiency of 23.8% in the case without any anti-reflection coating. At 300 K, the photodetector exhibits a dark current density of 6.05×10-3 A/cm2 under -400-mV applied bias voltage and 3.25×10-5 A/cm2 under zero, separately. The peak detectivity is 6.91×1010 cm·Hz1/2/W under zero bias voltage at 300 K.

Key words: InAsSb/GaSb quantum well, interband transition, photodetector, room temperature operating

中图分类号:  (III-V and II-VI semiconductors)

  • 72.80.Ey
81.07.St (Quantum wells) 85.60.Gz (Photodetectors (including infrared and CCD detectors))