中国物理B ›› 2017, Vol. 26 ›› Issue (9): 98506-098506.doi: 10.1088/1674-1056/26/9/098506

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Performance of dual-band short- or mid-wavelength infrared photodetectors based on InGaAsSb bulk materials and InAs/GaSb superlattices

Yao-yao Sun(孙姚耀), Yue-xi Lv(吕粤希), Xi Han(韩玺), Chun-yan Guo(郭春妍), Zhi Jiang(蒋志), Hong-yue Hao(郝宏玥), Dong-wei Jiang(蒋洞微), Guo-wei Wang(王国伟), Ying-qiang Xu(徐应强), Zhi-chuan Niu(牛智川)   

  1. 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
  • 收稿日期:2017-03-28 修回日期:2017-04-27 出版日期:2017-09-05 发布日期:2017-09-05
  • 通讯作者: Zhi-chuan Niu E-mail:zcniu@semi.ac.cn
  • 基金资助:

    Project supported by the National Basic Research Program of China (Grant Nos. 2016YFB0402403 and 2013CB932904), the National Natural Science Foundation of China (Grant Nos. 61290303 and 61306013), and China Postdoctoral Science Foundation (Grant No. 2016M601100).

Performance of dual-band short- or mid-wavelength infrared photodetectors based on InGaAsSb bulk materials and InAs/GaSb superlattices

Yao-yao Sun(孙姚耀)1,2,3, Yue-xi Lv(吕粤希)1,2,3, Xi Han(韩玺)1,2,3, Chun-yan Guo(郭春妍)1,2,3, Zhi Jiang(蒋志)1,2,3, Hong-yue Hao(郝宏玥)1,2,3, Dong-wei Jiang(蒋洞微)1,2,3, Guo-wei Wang(王国伟)1,2,3, Ying-qiang Xu(徐应强)1,2,3, Zhi-chuan Niu(牛智川)1,2,3   

  1. 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
  • Received:2017-03-28 Revised:2017-04-27 Online:2017-09-05 Published:2017-09-05
  • Contact: Zhi-chuan Niu E-mail:zcniu@semi.ac.cn
  • Supported by:

    Project supported by the National Basic Research Program of China (Grant Nos. 2016YFB0402403 and 2013CB932904), the National Natural Science Foundation of China (Grant Nos. 61290303 and 61306013), and China Postdoctoral Science Foundation (Grant No. 2016M601100).

RichHTML

0

PDF (PC)

306

赞

摘要：

In this paper, we demonstrate bias-selectable dual-band short- or mid-wavelength infrared photodetectors based on In0.24Ga0.76As0.21Sb0.79 bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2.2 μm and 3.6 μ m, respectively. At 200 K, the short-wave channel exhibits a peak quantum efficiency of 42% and a dark current density of 5.93×10-5 A/cm2 at 500 mV, thereby providing a detectivity of 1.55×1011 cm·Hz1/2/W. The mid-wave channel exhibits a peak quantum efficiency of 31% and a dark current density of 1.22×10-3 A/cm2 at -300 mV, thereby resulting in a detectivity of 2.71×1010 cm·Hz1/2/W. Moreover, we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure.

关键词: short-/mid-wavelength, InGaAsSb, InAs/GaSb

Abstract:

In this paper, we demonstrate bias-selectable dual-band short- or mid-wavelength infrared photodetectors based on In0.24Ga0.76As0.21Sb0.79 bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2.2 μm and 3.6 μ m, respectively. At 200 K, the short-wave channel exhibits a peak quantum efficiency of 42% and a dark current density of 5.93×10-5 A/cm2 at 500 mV, thereby providing a detectivity of 1.55×1011 cm·Hz1/2/W. The mid-wave channel exhibits a peak quantum efficiency of 31% and a dark current density of 1.22×10-3 A/cm2 at -300 mV, thereby resulting in a detectivity of 2.71×1010 cm·Hz1/2/W. Moreover, we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure.

Key words: short-/mid-wavelength, InGaAsSb, InAs/GaSb

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
68.65.Cd (Superlattices) 72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)