Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm

doi:10.1088/1674-1056/27/12/124207

中国物理B ›› 2018, Vol. 27 ›› Issue (12): 124207-124207.doi: 10.1088/1674-1056/27/12/124207

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm

1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China;
3 Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China

收稿日期:2018-08-14 修回日期:2018-09-01 出版日期:2018-12-05 发布日期:2018-12-05
通讯作者: Yu Zhang, Zhi-Chuan Niu E-mail:zhangyu@semi.ac.cn;zcniu@semi.ac.cn
基金资助:
Project supported by the Major Program of the National Natural Science Foundation of China (Grant No. 61790580), the National Natural Science Foundation of China (Grant No. 61435012), and the National Basic Research Program of China (Grant No. 2014CB643903).

Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm

Yi Zhang(张一)^1,2,3, Fu-Hui Shao(邵福会)^1,2,3, Cheng-Ao Yang(杨成奥)^1,2,3, Sheng-Wen Xie(谢圣文)^1,2,3, Shu-Shan Huang(黄书山)^1,2,3, Ye Yuan(袁野)^1,2,3, Jin-Ming Shang(尚金铭)^1,2,3, Yu Zhang(张宇)^1,2,3, Ying-Qiang Xu(徐应强)^1,2,3, Hai-Qiao Ni(倪海桥)^1,2,3, Zhi-Chuan Niu(牛智川)^1,2,3

1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China;
3 Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China

Received:2018-08-14 Revised:2018-09-01 Online:2018-12-05 Published:2018-12-05
Contact: Yu Zhang, Zhi-Chuan Niu E-mail:zhangyu@semi.ac.cn;zcniu@semi.ac.cn
Supported by:
Project supported by the Major Program of the National Natural Science Foundation of China (Grant No. 61790580), the National Natural Science Foundation of China (Grant No. 61435012), and the National Basic Research Program of China (Grant No. 2014CB643903).

摘要/Abstract

摘要：

We report a type-Ⅱ GaSb-based interband cascade laser operating a continuous wave at room temperature. The cascade region of interband cascade laser was designed using the ‘W’ configuration of the active quantum wells and the ‘Carrier Rebalancing’ method in the electron injector. The devices were processed into narrow ridges and mounted epitaxial side down on a copper heat sink. The 25-μm-wide, 3-mm-long ridge without coated facets generated 41.4 mW of continuous wave output power at T=15℃. And a low threshold current density of 267 A/cm² is achieved. The emission wavelength of the ICL is 3452.3 nm at 0.5 A.

关键词: interband cascade laser, mid-infrared, GaSb-based, type-Ⅱ W quantum well

Abstract:

Key words: interband cascade laser, mid-infrared, GaSb-based, type-Ⅱ W quantum well

中图分类号: (Semiconductor lasers; laser diodes)

42.55.Px

78.55.Cr (III-V semiconductors) 78.67.Pt (Multilayers; superlattices; photonic structures; metamaterials) 42.60.Pk (Continuous operation)

张一, 邵福会, 杨成奥, 谢圣文, 黄书山, 袁野, 尚金铭, 张宇, 徐应强, 倪海桥, 牛智川. Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm[J]. 中国物理B, 2018, 27(12): 124207-124207.

Yi Zhang(张一), Fu-Hui Shao(邵福会), Cheng-Ao Yang(杨成奥), Sheng-Wen Xie(谢圣文), Shu-Shan Huang(黄书山), Ye Yuan(袁野), Jin-Ming Shang(尚金铭), Yu Zhang(张宇), Ying-Qiang Xu(徐应强), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川). Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm[J]. Chin. Phys. B, 2018, 27(12): 124207-124207.

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Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm

Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm

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