中国物理B ›› 2022, Vol. 31 ›› Issue (6): 68503-068503.doi: 10.1088/1674-1056/ac4cc1

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Wet etching and passivation of GaSb-based very long wavelength infrared detectors

Xue-Yue Xu(许雪月)1,2, Jun-Kai Jiang(蒋俊锴)1,2, Wei-Qiang Chen(陈伟强)1,2, Su-Ning Cui(崔素宁)1,2, Wen-Guang Zhou(周文广)1,2, Nong Li(李农)1,2, Fa-Ran Chang(常发冉)1, Guo-Wei Wang(王国伟)1,2, Ying-Qiang Xu(徐应强)1,2, Dong-Wei Jiang(蒋洞微)1,2, Dong-Hai Wu(吴东海)1,2, Hong-Yue Hao(郝宏玥)1,2,†, and Zhi-Chuan Niu(牛智川)1,2,‡   

  1. 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2021-11-29 修回日期:2022-01-05 接受日期:2022-01-19 出版日期:2022-05-17 发布日期:2022-05-19
  • 通讯作者: Hong-Yue Hao, Hong-Yue Hao E-mail:haohongyue@semi.ac.cn;zcniu@semi.ac.cn
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant Nos. 2018YFA0209102 and 2019YFA070104), the National Natural Science Foundation of China (Grant Nos. 61790581 and 61274013), the Key Research Program of the Chinese Academy of Sciences (Grant No. XDPB22).

Wet etching and passivation of GaSb-based very long wavelength infrared detectors

Xue-Yue Xu(许雪月)1,2, Jun-Kai Jiang(蒋俊锴)1,2, Wei-Qiang Chen(陈伟强)1,2, Su-Ning Cui(崔素宁)1,2, Wen-Guang Zhou(周文广)1,2, Nong Li(李农)1,2, Fa-Ran Chang(常发冉)1, Guo-Wei Wang(王国伟)1,2, Ying-Qiang Xu(徐应强)1,2, Dong-Wei Jiang(蒋洞微)1,2, Dong-Hai Wu(吴东海)1,2, Hong-Yue Hao(郝宏玥)1,2,†, and Zhi-Chuan Niu(牛智川)1,2,‡   

  1. 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2021-11-29 Revised:2022-01-05 Accepted:2022-01-19 Online:2022-05-17 Published:2022-05-19
  • Contact: Hong-Yue Hao, Hong-Yue Hao E-mail:haohongyue@semi.ac.cn;zcniu@semi.ac.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant Nos. 2018YFA0209102 and 2019YFA070104), the National Natural Science Foundation of China (Grant Nos. 61790581 and 61274013), the Key Research Program of the Chinese Academy of Sciences (Grant No. XDPB22).

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摘要： The etching and passivation processes of very long wavelength infrared (VLWIR) detector based on the InAs/GaSb/AlSb type-II superlattice have been studied. By studying the effect of each component in the citric acid solution (citric acid, phosphoric acid, hydrogen peroxide, deionized water), the best solution ratio is obtained. After comparing different passivation materials such as sulfide + SiO2, Al2O3, Si3N4 and SU8, it is found that SU8 passivation can reduce the dark current of the device to a greater degree. Combining this wet etching and SU8 passivation, the R0A of VLWIR detector with a mesa diameter of 500 μm is about 3.6 Ω ·cm2 at 77 K.

关键词: InAs/GaSb/AlSb superlattice, very long wavelength infrared (VLWIR) detector, wet etching, passivation

Abstract: The etching and passivation processes of very long wavelength infrared (VLWIR) detector based on the InAs/GaSb/AlSb type-II superlattice have been studied. By studying the effect of each component in the citric acid solution (citric acid, phosphoric acid, hydrogen peroxide, deionized water), the best solution ratio is obtained. After comparing different passivation materials such as sulfide + SiO2, Al2O3, Si3N4 and SU8, it is found that SU8 passivation can reduce the dark current of the device to a greater degree. Combining this wet etching and SU8 passivation, the R0A of VLWIR detector with a mesa diameter of 500 μm is about 3.6 Ω ·cm2 at 77 K.

Key words: InAs/GaSb/AlSb superlattice, very long wavelength infrared (VLWIR) detector, wet etching, passivation

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
73.61.Ey (III-V semiconductors) 68.65.Cd (Superlattices)