中国物理B ›› 2019, Vol. 28 ›› Issue (3): 38504-038504.doi: 10.1088/1674-1056/28/3/038504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

High quantum efficiency long-/long-wave dual-color type-Ⅱ InAs/GaSb infrared detector

Zhi Jiang(蒋志), Yao-Yao Sun(孙姚耀), Chun-Yan Guo(郭春妍), Yue-Xi Lv(吕粤希), Hong-Yue Hao(郝宏玥), Dong-Wei Jiang(蒋洞微), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Zhi-Chuan Niu(牛智川)   

  1. 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2018-12-14 修回日期:2019-01-14 出版日期:2019-03-05 发布日期:2019-03-05
  • 通讯作者: Guo-Wei Wang, Zhi-Chuan Niu E-mail:zcniu@semi.ac.cn;wangguowei@semi.ac.cn
  • 基金资助:

    Project supported by the National Key Technology R&D Program of China (Grant Nos. 2018YFA0209104 and 2016YFB0402403).

High quantum efficiency long-/long-wave dual-color type-Ⅱ InAs/GaSb infrared detector

Zhi Jiang(蒋志)1,2, Yao-Yao Sun(孙姚耀)1,2, Chun-Yan Guo(郭春妍)1,2, Yue-Xi Lv(吕粤希)1,2, Hong-Yue Hao(郝宏玥)1,2, Dong-Wei Jiang(蒋洞微)1,2, Guo-Wei Wang(王国伟)1,2, Ying-Qiang Xu(徐应强)1,2, Zhi-Chuan Niu(牛智川)1,2   

  1. 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2018-12-14 Revised:2019-01-14 Online:2019-03-05 Published:2019-03-05
  • Contact: Guo-Wei Wang, Zhi-Chuan Niu E-mail:zcniu@semi.ac.cn;wangguowei@semi.ac.cn
  • Supported by:

    Project supported by the National Key Technology R&D Program of China (Grant Nos. 2018YFA0209104 and 2016YFB0402403).

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摘要：

A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ InAs/GaSb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The device could be operated as a single detector for sequential detection and showed high quantum efficiencies. The peak quantum efficiencies of long-wavelength infrared band-1 (blue channel) and long-wavelength infrared band-2 (red channel) were 44% at 6.3 μm under 20 mV and 57% at 9.1 μm under -60 mV, respectively. The optical performance for each channel was achieved using a 2μm thickness absorber. Due to the high QE, the specific detectivities of the blue and red channels reached 5.0×1011 cm·Hz1/2/W at 6.8 μm and 3.1×1011 cm·Hz1/2/W at 9.1 μm, respectively, at 77 K.

关键词: infrared detector, InAs/GaSb superlattice, dual-color, molecular beam epitaxy

Abstract:

A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ InAs/GaSb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The device could be operated as a single detector for sequential detection and showed high quantum efficiencies. The peak quantum efficiencies of long-wavelength infrared band-1 (blue channel) and long-wavelength infrared band-2 (red channel) were 44% at 6.3 μm under 20 mV and 57% at 9.1 μm under -60 mV, respectively. The optical performance for each channel was achieved using a 2μm thickness absorber. Due to the high QE, the specific detectivities of the blue and red channels reached 5.0×1011 cm·Hz1/2/W at 6.8 μm and 3.1×1011 cm·Hz1/2/W at 9.1 μm, respectively, at 77 K.

Key words: infrared detector, InAs/GaSb superlattice, dual-color, molecular beam epitaxy

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
68.65.Cd (Superlattices) 72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)