High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy

doi:10.1088/1674-1056/28/3/034202

中国物理B ›› 2019, Vol. 28 ›› Issue (3): 34202-034202.doi: 10.1088/1674-1056/28/3/034202

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy

Jin-Ming Shang(尚金铭), Jian Feng(冯健), Cheng-Ao Yang(杨成奥), Sheng-Wen Xie(谢圣文), Yi Zhang(张一), Cun-Zhu Tong(佟存柱), Yu Zhang(张宇), Zhi-Chuan Niu(牛智川)

1 State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, china;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

收稿日期:2018-12-03 修回日期:2018-12-21 出版日期:2019-03-05 发布日期:2019-03-05
通讯作者: Yu Zhang, Zhi-Chuan Niu E-mail:zhangyu@semi.ac.cn;zcniu@semi.ac.cn
基金资助:
Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790581, 61790582, and 61790584), the National Natural Science Foundation of China (Grant No. 61435012), and the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032).

High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy

Jin-Ming Shang(尚金铭)^1,2, Jian Feng(冯健)^2,3, Cheng-Ao Yang(杨成奥)^1,2, Sheng-Wen Xie(谢圣文)^1,2, Yi Zhang(张一)^1,2, Cun-Zhu Tong(佟存柱)^2,3, Yu Zhang(张宇)^1,2, Zhi-Chuan Niu(牛智川)^1,2

1 State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, china;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

Received:2018-12-03 Revised:2018-12-21 Online:2019-03-05 Published:2019-03-05
Contact: Yu Zhang, Zhi-Chuan Niu E-mail:zhangyu@semi.ac.cn;zcniu@semi.ac.cn
Supported by:
Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790581, 61790582, and 61790584), the National Natural Science Foundation of China (Grant No. 61435012), and the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032).

摘要/Abstract

摘要：

The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser (SDL) emitting near 2.0 μm in an external cavity configuration are reported. The high quality epitaxial structure, grown on Te-doped (001) oriented GaSb substrate by molecular beam epitaxy, consists of a distributed Bragg reflector (DBR), a multi-quantum-well gain region, and a window layer. An intra-cavity SiC heat spreader was attached to the gain chip for effective thermal management. A continuous-wave output power of over 1 W operating at 2.03 μ wavelength operating near room temperature was achieved using a 3% output coupler.

关键词: semiconductor disk laser, GaSb, molecular beam epitaxy

Abstract:

Key words: semiconductor disk laser, GaSb, molecular beam epitaxy

中图分类号: (Semiconductor lasers; laser diodes)

42.55.Px

42.60.Pk (Continuous operation) 78.55.Cr (III-V semiconductors) 78.67.De (Quantum wells)

尚金铭, 冯健, 杨成奥, 谢圣文, 张一, 佟存柱, 张宇, 牛智川. High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy[J]. 中国物理B, 2019, 28(3): 34202-034202.

Jin-Ming Shang(尚金铭), Jian Feng(冯健), Cheng-Ao Yang(杨成奥), Sheng-Wen Xie(谢圣文), Yi Zhang(张一), Cun-Zhu Tong(佟存柱), Yu Zhang(张宇), Zhi-Chuan Niu(牛智川). High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy[J]. Chin. Phys. B, 2019, 28(3): 34202-034202.

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High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy

High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy

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