Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs
邸绍岩, 沈磊, 伦志远, 常鹏鹰, 赵凯, 卢朓, 杜刚, 刘晓彦
Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs
Shaoyan Di(邸绍岩), Lei Shen(沈磊), Zhiyuan Lun(伦志远), Pengying Chang(常鹏鹰), Kai Zhao(赵凯), Tiao Lu(卢朓), Gang Du(杜刚), Xiaoyan Liu(刘晓彦)
中国物理B
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2017, (4): 47201
-047201
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DOI: 10.1088/1674-1056/26/4/047201