中国物理B ›› 2016, Vol. 25 ›› Issue (9): 96801-096801.doi: 10.1088/1674-1056/25/9/096801

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based InxGa1-xAs/In0.52Al0.48As HEMT structures

Shu-Xing Zhou(周书星), Ming Qi(齐鸣), Li-Kun Ai(艾立鹍), An-Huai Xu(徐安怀)   

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 收稿日期:2016-01-11 修回日期:2016-05-09 出版日期:2016-09-05 发布日期:2016-09-05
  • 通讯作者: Ming Qi E-mail:mqi@mail.sim.ac.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 61434006).

Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based InxGa1-xAs/In0.52Al0.48As HEMT structures

Shu-Xing Zhou(周书星), Ming Qi(齐鸣), Li-Kun Ai(艾立鹍), An-Huai Xu(徐安怀)   

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • Received:2016-01-11 Revised:2016-05-09 Online:2016-09-05 Published:2016-09-05
  • Contact: Ming Qi E-mail:mqi@mail.sim.ac.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 61434006).

RichHTML

0

PDF (PC)

372

赞

摘要：

The structure of InP-based InxGa1-xAs/In0.52Al0.48As pseudomorphic high electron mobility transistor (PHEMT) was optimized in detail. Effects of growth temperature, growth interruption time, Siδ-doping condition, channel thickness and In content, and inserted AlAs monolayer (ML) on the two-dimensional electron gas (2DEG) performance were investigated carefully. It was found that the use of the inserted AlAs monolayer has an enhancement effect on the mobility due to the reduction of interface roughness and the suppression of Si movement. With optimization of the growth parameters, the structures composed of a 10 nm thick In0.75Ga0.25As channel layer and a 3 nm thick AlAs/In0.52Al0.48As superlattices spacer layer exhibited electron mobilities as high as 12500 cm2·V-1·s-1 (300 K) and 53500 cm2·V-1·s-1 (77 K) and the corresponding sheet carrier concentrations (Ns) of 2.8×1012 cm-2 and 2.9×1012 cm-2, respectively. To the best of the authors' knowledge, this is the highest reported room temperature mobility for InP-based HEMTs with a spacer of 3 nm to date.

关键词: high electron mobility transistor, two-dimensional electron gas, InP

Abstract:

The structure of InP-based InxGa1-xAs/In0.52Al0.48As pseudomorphic high electron mobility transistor (PHEMT) was optimized in detail. Effects of growth temperature, growth interruption time, Siδ-doping condition, channel thickness and In content, and inserted AlAs monolayer (ML) on the two-dimensional electron gas (2DEG) performance were investigated carefully. It was found that the use of the inserted AlAs monolayer has an enhancement effect on the mobility due to the reduction of interface roughness and the suppression of Si movement. With optimization of the growth parameters, the structures composed of a 10 nm thick In0.75Ga0.25As channel layer and a 3 nm thick AlAs/In0.52Al0.48As superlattices spacer layer exhibited electron mobilities as high as 12500 cm2·V-1·s-1 (300 K) and 53500 cm2·V-1·s-1 (77 K) and the corresponding sheet carrier concentrations (Ns) of 2.8×1012 cm-2 and 2.9×1012 cm-2, respectively. To the best of the authors' knowledge, this is the highest reported room temperature mobility for InP-based HEMTs with a spacer of 3 nm to date.

Key words: high electron mobility transistor, two-dimensional electron gas, InP

中图分类号:  (Semiconductors)

  • 68.35.bg
68.35.Ct (Interface structure and roughness) 61.66.Dk (Alloys )