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Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based In
x
Ga
1-
x
As/In
0.52
Al
0.48
As HEMT structures
周书星, 齐鸣, 艾立鹍, 徐安怀
Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based In
x
Ga
1-
x
As/In
0.52
Al
0.48
As HEMT structures
Shu-Xing Zhou(周书星), Ming Qi(齐鸣), Li-Kun Ai(艾立鹍), An-Huai Xu(徐安怀)
中国物理B . 2016, (
9
): 96801 -096801 . DOI: 10.1088/1674-1056/25/9/096801