中国物理B ›› 2016, Vol. 25 ›› Issue (6): 66601-066601.doi: 10.1088/1674-1056/25/6/066601

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Properties of n-Ge epilayer on Si substrate with in-situ doping technology

Shi-Hao Huang(黄诗浩), Cheng Li(李成), Cheng-Zhao Chen(陈城钊), Chen Wang(王尘), Wen-Ming Xie(谢文明), Shu-Yi Lin(林抒毅), Ming Shao(邵明), Ming-Xing Nie(聂明星), Cai-Yun Chen(陈彩云)   

  1. 1 College of Information Science and Engineering, Fujian University of Technology, Fuzhou 350118, China;
    2 Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China;
    3 Department of Physics and Electronics Engineering, Hanshan Normal University, Chaozhou 521041, China
  • 收稿日期:2015-10-20 修回日期:2016-02-19 出版日期:2016-06-05 发布日期:2016-06-05
  • 通讯作者: Shi-Hao Huang E-mail:haoshihuang@qq.com
  • 基金资助:

    Project supported by the National Basic Research Program of China (Grant No. 2013CB632103), the National Key Technology Support Program of China (Grant No. 2015BAF24B01), the Natural Science Foundation of Fujian Province of China (Grant No. 2016J05147), the Key Sci-Tech Research and Development Platform of Fujian Province, China (Grant No. 2014H2002), the Provincial University Foundation of Fujian Province, China (Grant No. JK2013030), the Educational Youth Key Foundation of Fujian Province, China (Grant No. JA13210), and the Scientific Research Fund of Fujian University of Technology, China (Grant No. GY-Z14073).

Properties of n-Ge epilayer on Si substrate with in-situ doping technology

Shi-Hao Huang(黄诗浩)1, Cheng Li(李成)2, Cheng-Zhao Chen(陈城钊)3, Chen Wang(王尘)2, Wen-Ming Xie(谢文明)1, Shu-Yi Lin(林抒毅)1, Ming Shao(邵明)1, Ming-Xing Nie(聂明星)1, Cai-Yun Chen(陈彩云)1   

  1. 1 College of Information Science and Engineering, Fujian University of Technology, Fuzhou 350118, China;
    2 Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China;
    3 Department of Physics and Electronics Engineering, Hanshan Normal University, Chaozhou 521041, China
  • Received:2015-10-20 Revised:2016-02-19 Online:2016-06-05 Published:2016-06-05
  • Contact: Shi-Hao Huang E-mail:haoshihuang@qq.com
  • Supported by:

    Project supported by the National Basic Research Program of China (Grant No. 2013CB632103), the National Key Technology Support Program of China (Grant No. 2015BAF24B01), the Natural Science Foundation of Fujian Province of China (Grant No. 2016J05147), the Key Sci-Tech Research and Development Platform of Fujian Province, China (Grant No. 2014H2002), the Provincial University Foundation of Fujian Province, China (Grant No. JK2013030), the Educational Youth Key Foundation of Fujian Province, China (Grant No. JA13210), and the Scientific Research Fund of Fujian University of Technology, China (Grant No. GY-Z14073).

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摘要：

The properties of n-Ge epilayer deposited on Si substrate with in-situ doping technology in a cold-wall ultrahigh vacuum chemical vapor deposition (UHVCVD) system are investigated. The growth temperature of ～500℃ is optimal for the n-Ge growth in our equipment with a phosphorus concentration of ～1018 cm-3. In the n-Ge epilayer, the depth profile of phosphorus concentration is box-shaped and the tensile strain of 0.12% confirmed by x-ray diffraction measurement is introduced which results in the red shift of the photoluminescence. The enhancements of photoluminescence intensity with the increase of the doping concentration are observed, which is consistent with the modeling of the spontaneous emission spectrum for direct transition of Ge. The results are of significance for guiding the growth of n-Ge epilayer with in-situ doping technology.

关键词: in-situ doping technology, germanium, epitaxial growth

Abstract:

The properties of n-Ge epilayer deposited on Si substrate with in-situ doping technology in a cold-wall ultrahigh vacuum chemical vapor deposition (UHVCVD) system are investigated. The growth temperature of ～500℃ is optimal for the n-Ge growth in our equipment with a phosphorus concentration of ～1018 cm-3. In the n-Ge epilayer, the depth profile of phosphorus concentration is box-shaped and the tensile strain of 0.12% confirmed by x-ray diffraction measurement is introduced which results in the red shift of the photoluminescence. The enhancements of photoluminescence intensity with the increase of the doping concentration are observed, which is consistent with the modeling of the spontaneous emission spectrum for direct transition of Ge. The results are of significance for guiding the growth of n-Ge epilayer with in-situ doping technology.

Key words: in-situ doping technology, germanium, epitaxial growth

中图分类号:  (Diffusion of impurities ?)

  • 66.30.J-
61.72.uf (Ge and Si) 61.72.jd (Vacancies)