中国物理B ›› 2023, Vol. 32 ›› Issue (1): 18508-018508.doi: 10.1088/1674-1056/ac90b5

所属专题： SPECIAL TOPIC — Physics in micro-LED and quantum dots devices

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Review of a direct epitaxial approach to achieving micro-LEDs

Yuefei Cai(蔡月飞)1,†, Jie Bai(白洁)2, and Tao Wang(王涛)2,‡   

  1. 1 Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen 518055, China;
    2 Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD, United Kingdom
  • 收稿日期:2022-07-30 修回日期:2022-08-30 接受日期:2022-09-09 出版日期:2022-12-08 发布日期:2023-01-14
  • 通讯作者: Yuefei Cai, Tao Wang E-mail:caiyf@sustech.edu.cn;t.wang@sheffield.ac.uk
  • 基金资助:
    Project supported by the Engineering and Physical Sciences Research Council (EPSRC), U.K., via EP/P006973/1, EP/T013001/1, and EP/M015181/1.

Review of a direct epitaxial approach to achieving micro-LEDs

Yuefei Cai(蔡月飞)1,†, Jie Bai(白洁)2, and Tao Wang(王涛)2,‡   

  1. 1 Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen 518055, China;
    2 Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD, United Kingdom
  • Received:2022-07-30 Revised:2022-08-30 Accepted:2022-09-09 Online:2022-12-08 Published:2023-01-14
  • Contact: Yuefei Cai, Tao Wang E-mail:caiyf@sustech.edu.cn;t.wang@sheffield.ac.uk
  • Supported by:
    Project supported by the Engineering and Physical Sciences Research Council (EPSRC), U.K., via EP/P006973/1, EP/T013001/1, and EP/M015181/1.

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摘要： There is a significantly increasing demand of developing augmented reality and virtual reality (AR and VR) devices, where micro-LEDs (μLEDs) with a dimension of ≤ 5 μ m are the key elements. Typically, μLEDs are fabricated by dry-etching technologies, unavoidably leading to a severe degradation in optical performance as a result of dry-etching induced damages. This becomes a particularly severe issue when the dimension of LEDs is ≤ 10 μ m. In order to address the fundamental challenge, the Sheffield team has proposed and then developed a direct epitaxial approach to achieving μLEDs, where the dry-etching technologies for the formation of μLED mesas are not needed anymore. This paper provides a review on this technology and then demonstrates a number of monolithically integrated devices on a single chip using this technology.

关键词: micro-LED, epitaxial growth, gallium nitride, display

Abstract: There is a significantly increasing demand of developing augmented reality and virtual reality (AR and VR) devices, where micro-LEDs (μLEDs) with a dimension of ≤ 5 μ m are the key elements. Typically, μLEDs are fabricated by dry-etching technologies, unavoidably leading to a severe degradation in optical performance as a result of dry-etching induced damages. This becomes a particularly severe issue when the dimension of LEDs is ≤ 10 μ m. In order to address the fundamental challenge, the Sheffield team has proposed and then developed a direct epitaxial approach to achieving μLEDs, where the dry-etching technologies for the formation of μLED mesas are not needed anymore. This paper provides a review on this technology and then demonstrates a number of monolithically integrated devices on a single chip using this technology.

Key words: micro-LED, epitaxial growth, gallium nitride, display

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
81.05.Ea (III-V semiconductors)