Properties of n-Ge epilayer on Si substrate with
in-situ doping technology
黄诗浩, 李成, 陈城钊, 王尘, 谢文明, 林抒毅, 邵明, 聂明星, 陈彩云
Properties of n-Ge epilayer on Si substrate with
in-situ doping technology
Shi-Hao Huang(黄诗浩), Cheng Li(李成), Cheng-Zhao Chen(陈城钊), Chen Wang(王尘), Wen-Ming Xie(谢文明), Shu-Yi Lin(林抒毅), Ming Shao(邵明), Ming-Xing Nie(聂明星), Cai-Yun Chen(陈彩云)
中国物理B
.
2016, (6): 66601
-066601
.
DOI: 10.1088/1674-1056/25/6/066601