Two-dimensional models of threshold voltage andsubthreshold current for symmetrical double-material double-gate strained Si MOSFETs

doi:10.1088/1674-1056/25/3/038502

中国物理B ›› 2016, Vol. 25 ›› Issue (3): 38502-038502.doi: 10.1088/1674-1056/25/3/038502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Two-dimensional models of threshold voltage andsubthreshold current for symmetrical double-material double-gate strained Si MOSFETs

Yan-hui Xin(辛艳辉), Sheng Yuan(袁胜), Ming-tang Liu(刘明堂),Hong-xia Liu(刘红侠), He-cai Yuan(袁合才)

1. Department of Information and Engineering, North China University of Water Resources and Electric Power, Zhengzhou 450046, China;
2. Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China;
3. Department of Mathematics and Information Science, North China University of Water Resources and Electric Power, Zhengzhou 450046, China

收稿日期:2015-09-16 修回日期:2015-11-10 出版日期:2016-03-05 发布日期:2016-03-05
通讯作者: Hong-xia Liu E-mail:hxliu@mail.xidian.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61376099, 11235008, and 61205003).

Two-dimensional models of threshold voltage andsubthreshold current for symmetrical double-material double-gate strained Si MOSFETs

Yan-hui Xin(辛艳辉)^1,2, Sheng Yuan(袁胜)¹, Ming-tang Liu(刘明堂)¹,Hong-xia Liu(刘红侠)², He-cai Yuan(袁合才)³

1. Department of Information and Engineering, North China University of Water Resources and Electric Power, Zhengzhou 450046, China;
2. Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China;
3. Department of Mathematics and Information Science, North China University of Water Resources and Electric Power, Zhengzhou 450046, China

Received:2015-09-16 Revised:2015-11-10 Online:2016-03-05 Published:2016-03-05
Contact: Hong-xia Liu E-mail:hxliu@mail.xidian.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61376099, 11235008, and 61205003).

摘要/Abstract

摘要： The two-dimensional models for symmetrical double-material double-gate (DM-DG) strained Si (s-Si) metal-oxide semiconductor field effect transistors (MOSFETs) are presented. The surface potential and the surface electric field expressions have been obtained by solving Poisson's equation. The models of threshold voltage and subthreshold current are obtained based on the surface potential expression. The surface potential and the surface electric field are compared with those of single-material double-gate (SM-DG) MOSFETs. The effects of different device parameters on the threshold voltage and the subthreshold current are demonstrated. The analytical models give deep insight into the device parameters design. The analytical results obtained from the proposed models show good matching with the simulation results using DESSIS.

关键词: double-material double-gate MOSFET, strained Si, threshold voltage, subthreshold current

Abstract: The two-dimensional models for symmetrical double-material double-gate (DM-DG) strained Si (s-Si) metal-oxide semiconductor field effect transistors (MOSFETs) are presented. The surface potential and the surface electric field expressions have been obtained by solving Poisson's equation. The models of threshold voltage and subthreshold current are obtained based on the surface potential expression. The surface potential and the surface electric field are compared with those of single-material double-gate (SM-DG) MOSFETs. The effects of different device parameters on the threshold voltage and the subthreshold current are demonstrated. The analytical models give deep insight into the device parameters design. The analytical results obtained from the proposed models show good matching with the simulation results using DESSIS.

Key words: double-material double-gate MOSFET, strained Si, threshold voltage, subthreshold current

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

85.30.Hi (Surface barrier, boundary, and point contact devices) 85.35.-p (Nanoelectronic devices)

辛艳辉, 袁胜, 刘明堂, 刘红侠, 袁合才. Two-dimensional models of threshold voltage andsubthreshold current for symmetrical double-material double-gate strained Si MOSFETs[J]. 中国物理B, 2016, 25(3): 38502-038502.

Yan-hui Xin(辛艳辉), Sheng Yuan(袁胜), Ming-tang Liu(刘明堂),Hong-xia Liu(刘红侠), He-cai Yuan(袁合才). Two-dimensional models of threshold voltage andsubthreshold current for symmetrical double-material double-gate strained Si MOSFETs[J]. Chin. Phys. B, 2016, 25(3): 38502-038502.

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Two-dimensional models of threshold voltage andsubthreshold current for symmetrical double-material double-gate strained Si MOSFETs

Two-dimensional models of threshold voltage andsubthreshold current for symmetrical double-material double-gate strained Si MOSFETs

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