Analytical threshold voltage model for strained silicon GAA-TFET

doi:10.1088/1674-1056/25/11/118501

中国物理B ›› 2016, Vol. 25 ›› Issue (11): 118501-118501.doi: 10.1088/1674-1056/25/11/118501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Analytical threshold voltage model for strained silicon GAA-TFET

Hai-Yan Kang(康海燕), Hui-Yong Hu(胡辉勇), Bin Wang(王斌)

Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2016-04-15 修回日期:2016-07-24 出版日期:2016-11-05 发布日期:2016-11-05
通讯作者: Hai-Yan Kang E-mail:Kanghaiyan5200@163.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61474085).

Analytical threshold voltage model for strained silicon GAA-TFET

Hai-Yan Kang(康海燕), Hui-Yong Hu(胡辉勇), Bin Wang(王斌)

Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2016-04-15 Revised:2016-07-24 Online:2016-11-05 Published:2016-11-05
Contact: Hai-Yan Kang E-mail:Kanghaiyan5200@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61474085).

摘要/Abstract

摘要： Tunnel field effect transistors (TFETs) are promising devices for low power applications. An analytical threshold voltage model, based on the channel surface potential and electric field obtained by solving the 2D Poisson's equation, for strained silicon gate all around TFETs is proposed. The variation of the threshold voltage with device parameters, such as the strain (Ge mole fraction x), gate oxide thickness, gate oxide permittivity, and channel length has also been investigated. The threshold voltage model is extracted using the peak transconductance method and is verified by good agreement with the results obtained from the TCAD simulation.

关键词: tunnel field effect transistor, threshold voltage, strained silicon

Abstract: Tunnel field effect transistors (TFETs) are promising devices for low power applications. An analytical threshold voltage model, based on the channel surface potential and electric field obtained by solving the 2D Poisson's equation, for strained silicon gate all around TFETs is proposed. The variation of the threshold voltage with device parameters, such as the strain (Ge mole fraction x), gate oxide thickness, gate oxide permittivity, and channel length has also been investigated. The threshold voltage model is extracted using the peak transconductance method and is verified by good agreement with the results obtained from the TCAD simulation.

Key words: tunnel field effect transistor, threshold voltage, strained silicon

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices)) 71.20.Nr (Semiconductor compounds)

康海燕, 胡辉勇, 王斌. Analytical threshold voltage model for strained silicon GAA-TFET[J]. 中国物理B, 2016, 25(11): 118501-118501.

Hai-Yan Kang(康海燕), Hui-Yong Hu(胡辉勇), Bin Wang(王斌). Analytical threshold voltage model for strained silicon GAA-TFET[J]. Chin. Phys. B, 2016, 25(11): 118501-118501.

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Analytical threshold voltage model for strained silicon GAA-TFET

Analytical threshold voltage model for strained silicon GAA-TFET

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