Threshold switching uniformity in In2Se3 nanowire-based phase change memory

doi:10.1088/1674-1056/24/5/057702

中国物理B ›› 2015, Vol. 24 ›› Issue (5): 57702-057702.doi: 10.1088/1674-1056/24/5/057702

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Threshold switching uniformity in In₂Se₃ nanowire-based phase change memory

陈键^{a b}, 杜刚^b, 刘晓彦^b

a Shenzhen Graduate School, Peking University, Shenzhen 518055, China;
b Institute of Microelectronics, Peking University, Beijing 100871, China

收稿日期:2014-11-14 修回日期:2014-12-09 出版日期:2015-05-05 发布日期:2015-05-05
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00604).

Threshold switching uniformity in In₂Se₃ nanowire-based phase change memory

Chen Jian (陈键)^{a b}, Du Gang (杜刚)^b, Liu Xiao-Yan (刘晓彦)^b

a Shenzhen Graduate School, Peking University, Shenzhen 518055, China;
b Institute of Microelectronics, Peking University, Beijing 100871, China

Received:2014-11-14 Revised:2014-12-09 Online:2015-05-05 Published:2015-05-05
Contact: Liu Xiao-Yan E-mail:xyliu@ime.pku.edu.cn
About author:77.80.Fm; 85.30.-z; 78.66.Jg; 85.30.-z
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00604).

摘要/Abstract

摘要： The uniformity of threshold voltage and threshold current in the In₂Se₃ nanowire-based phase change memory (PCM) devices is investigated. Based on the trap-limited transport model, amorphous layer thickness, trap density, and trap depth are considered to clarify their influences upon the threshold voltage and threshold current through simulations.

关键词: phase change memory, nanowire, trap-limited model, threshold voltage

Abstract: The uniformity of threshold voltage and threshold current in the In₂Se₃ nanowire-based phase change memory (PCM) devices is investigated. Based on the trap-limited transport model, amorphous layer thickness, trap density, and trap depth are considered to clarify their influences upon the threshold voltage and threshold current through simulations.

Key words: phase change memory, nanowire, trap-limited model, threshold voltage

中图分类号: (Switching phenomena)

77.80.Fm

85.30.-z (Semiconductor devices) 78.66.Jg (Amorphous semiconductors; glasses) 85.30.-z (Semiconductor devices)

陈键, 杜刚, 刘晓彦. Threshold switching uniformity in In₂Se₃ nanowire-based phase change memory[J]. 中国物理B, 2015, 24(5): 57702-057702.

Chen Jian (陈键), Du Gang (杜刚), Liu Xiao-Yan (刘晓彦). Threshold switching uniformity in In₂Se₃ nanowire-based phase change memory[J]. Chin. Phys. B, 2015, 24(5): 57702-057702.

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Threshold switching uniformity in In₂Se₃ nanowire-based phase change memory

Threshold switching uniformity in In₂Se₃ nanowire-based phase change memory

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