›› 2015, Vol. 24 ›› Issue (3): 36801-036801.doi: 10.1088/1674-1056/24/3/036801

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Strain analysis of free-standing strained silicon-on-insulator nanomembrane

孙高迪a b, 董林玺a, 薛忠营b, 陈达b, 郭庆磊b, 母志强b   

  1. a Key Laboratory of RF Circuits and System of the Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China;
    b State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 收稿日期:2014-08-27 修回日期:2014-12-21 出版日期:2015-03-05 发布日期:2015-03-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61376117 and 61107025) and the Zhejiang Provincial Natural Science Foundation of China (Grant No. LY13F040004).

Strain analysis of free-standing strained silicon-on-insulator nanomembrane

Sun Gao-Di (孙高迪)a b, Dong Lin-Xi (董林玺)a, Xue Zhong-Ying (薛忠营)b, Chen Da (陈达)b, Guo Qing-Lei (郭庆磊)b, Mu Zhi-Qiang (母志强)b   

  1. a Key Laboratory of RF Circuits and System of the Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China;
    b State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • Received:2014-08-27 Revised:2014-12-21 Online:2015-03-05 Published:2015-03-05
  • Contact: Dong Lin-Xi E-mail:donglinxi@hdu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61376117 and 61107025) and the Zhejiang Provincial Natural Science Foundation of China (Grant No. LY13F040004).

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摘要： Based on the ultra-thin strained silicon-on-insulator (sSOI) technology, by creatively using a hydrofluoric acid (HF) vapor corrosion system to dry etch the SiO2 layer, a large area of suspended strained silicon (sSi) nanomembrane with uniform strain distribution is fabricated. The strain state in the implemented nanomembrane is comprehensively analyzed by using an UV-Raman spectrometer with different laser powers. The results show that the inherent strain is preserved while there are artificial Raman shifts induced by the heat effect, which is proportional to the laser power. The suspended sSOI nanomembrane will be an important material for future novel high-performance devices.

关键词: dry etching, strained silicon-on-insulator, Raman spectrum, strain

Abstract: Based on the ultra-thin strained silicon-on-insulator (sSOI) technology, by creatively using a hydrofluoric acid (HF) vapor corrosion system to dry etch the SiO2 layer, a large area of suspended strained silicon (sSi) nanomembrane with uniform strain distribution is fabricated. The strain state in the implemented nanomembrane is comprehensively analyzed by using an UV-Raman spectrometer with different laser powers. The results show that the inherent strain is preserved while there are artificial Raman shifts induced by the heat effect, which is proportional to the laser power. The suspended sSOI nanomembrane will be an important material for future novel high-performance devices.

Key words: dry etching, strained silicon-on-insulator, Raman spectrum, strain

中图分类号:  (Mechanical properties; surface strains)

  • 68.35.Gy
61.72.uf (Ge and Si) 77.80.bn (Strain and interface effects)