中国物理B ›› 2016, Vol. 25 ›› Issue (3): 38503-038503.doi: 10.1088/1674-1056/25/3/038503
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Liuan Li(李柳暗), Jiaqi Zhang(张家琦), Yang Liu(刘扬), Jin-Ping Ao(敖金平)
Liuan Li(李柳暗)1, Jiaqi Zhang(张家琦)2, Yang Liu(刘扬)1, Jin-Ping Ao(敖金平)2
摘要: In this paper, TiN/AlOx gated AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 ℃ with the contact resistance approximately 1.6 Ω· mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/AlOx gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AlGaN/GaN MOS-HFETs.
中图分类号: (Semiconductor-device characterization, design, and modeling)