An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect

doi:10.1088/1674-1056/25/4/047305

中国物理B ›› 2016, Vol. 25 ›› Issue (4): 47305-047305.doi: 10.1088/1674-1056/25/4/047305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect

Fan-Yu Liu(刘凡宇), Heng-Zhu Liu(刘衡竹), Bi-Wei Liu(刘必慰), Yu-Feng Guo(郭宇峰)

1 School of Computer, National University of Defense Technology, Changsha 410073, China;
2 Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 201131, China

收稿日期:2015-10-25 修回日期:2015-12-26 出版日期:2016-04-05 发布日期:2016-04-05
通讯作者: Fan-Yu Liu E-mail:liufanyu986412@hotmail.com
基金资助:
Project supported by the Research Program of the National University of Defense Technology (Grant No. JC 13-06-04).

An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect

Fan-Yu Liu(刘凡宇)¹, Heng-Zhu Liu(刘衡竹)¹, Bi-Wei Liu(刘必慰)¹, Yu-Feng Guo(郭宇峰)²

1 School of Computer, National University of Defense Technology, Changsha 410073, China;
2 Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 201131, China

Received:2015-10-25 Revised:2015-12-26 Online:2016-04-05 Published:2016-04-05
Contact: Fan-Yu Liu E-mail:liufanyu986412@hotmail.com
Supported by:
Project supported by the Research Program of the National University of Defense Technology (Grant No. JC 13-06-04).

摘要/Abstract

摘要： In this paper, the three-dimensional (3D) coupling effect is discussed for nanowire junctionless silicon-on-insulator (SOI) FinFETs. With fin width decreasing from 100 nm to 7 nm, the electric field induced by the lateral gates increases and therefore the influence of back gate on the threshold voltage weakens. For a narrow and tall fin, the lateral gates mainly control the channel and therefore the effect of back gate decreases. A simple two-dimensional (2D) potential model is proposed for the subthreshold region of junctionless SOI FinFET. TCAD simulations validate our model. It can be used to extract the threshold voltage and doping concentration. In addition, the tuning of back gate on the threshold voltage can be predicted.

关键词: coupling effect, threshold voltage, subthreshold region, SOI FinFETs, junctionless, front gate, lateral gate, back gate

Abstract: In this paper, the three-dimensional (3D) coupling effect is discussed for nanowire junctionless silicon-on-insulator (SOI) FinFETs. With fin width decreasing from 100 nm to 7 nm, the electric field induced by the lateral gates increases and therefore the influence of back gate on the threshold voltage weakens. For a narrow and tall fin, the lateral gates mainly control the channel and therefore the effect of back gate decreases. A simple two-dimensional (2D) potential model is proposed for the subthreshold region of junctionless SOI FinFET. TCAD simulations validate our model. It can be used to extract the threshold voltage and doping concentration. In addition, the tuning of back gate on the threshold voltage can be predicted.

Key words: coupling effect, threshold voltage, subthreshold region, SOI FinFETs, junctionless, front gate, lateral gate, back gate

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

85.30.-z (Semiconductor devices) 77.55.df (For silicon electronics)

刘凡宇, 刘衡竹, 刘必慰, 郭宇峰. An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect[J]. 中国物理B, 2016, 25(4): 47305-047305.

Fan-Yu Liu(刘凡宇), Heng-Zhu Liu(刘衡竹), Bi-Wei Liu(刘必慰), Yu-Feng Guo(郭宇峰). An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect[J]. Chin. Phys. B, 2016, 25(4): 47305-047305.

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An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect

An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect

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