Asymmetric resistive switching processes in W:AlOx/WOy bilayer devices

doi:10.1088/1674-1056/24/5/058501

中国物理B ›› 2015, Vol. 24 ›› Issue (5): 58501-058501.doi: 10.1088/1674-1056/24/5/058501

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Asymmetric resistive switching processes in W:AlO_x/WO_y bilayer devices

吴华强, 吴明昊, 李辛毅, 白越, 邓宁, 余志平, 钱鹤

Institute of Microelectronics, Tsinghua University, Beijing 100084, China

收稿日期:2014-11-01 修回日期:2014-12-02 出版日期:2015-05-05 发布日期:2015-05-05

Asymmetric resistive switching processes in W:AlO_x/WO_y bilayer devices

Wu Hua-Qiang (吴华强), Wu Ming-Hao (吴明昊), Li Xin-Yi (李辛毅), Bai Yue (白越), Deng Ning (邓宁), Yu Zhi-Ping (余志平), Qian He (钱鹤)

Institute of Microelectronics, Tsinghua University, Beijing 100084, China

Received:2014-11-01 Revised:2014-12-02 Online:2015-05-05 Published:2015-05-05
Contact: Wu Hua-Qiang E-mail:wuhq@tsinghua.edu.cn
About author:85.30.De

摘要/Abstract

摘要：

Asymmetric resistive switching processes were observed in W:AlO_x/WO_y bilayer RRAM devices. During pulse programming measurements, the RESET speed is in the range of hundreds of microseconds under -1.1 V bias, while the SET speed is in the range of tens of nanoseconds under 1.2 V bias. Electrical measurements with different pulse conditions and different temperatures were carried out to understand these significant differences in switching time. A redox reaction model in the W:AlO_x/WO_y device structure is proposed to explain this switching time difference.

关键词: RRAM, tungsten oxide, asymmetric resistive switching

Abstract:

Key words: RRAM, tungsten oxide, asymmetric resistive switching

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

吴华强, 吴明昊, 李辛毅, 白越, 邓宁, 余志平, 钱鹤. Asymmetric resistive switching processes in W:AlO_x/WO_y bilayer devices[J]. 中国物理B, 2015, 24(5): 58501-058501.

Wu Hua-Qiang (吴华强), Wu Ming-Hao (吴明昊), Li Xin-Yi (李辛毅), Bai Yue (白越), Deng Ning (邓宁), Yu Zhi-Ping (余志平), Qian He (钱鹤). Asymmetric resistive switching processes in W:AlO_x/WO_y bilayer devices[J]. Chin. Phys. B, 2015, 24(5): 58501-058501.

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Asymmetric resistive switching processes in W:AlO_x/WO_y bilayer devices

Asymmetric resistive switching processes in W:AlO_x/WO_y bilayer devices

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