中国物理B ›› 2011, Vol. 20 ›› Issue (9): 97703-097703.doi: 10.1088/1674-1056/20/9/097703

• • 上一篇    下一篇

Bipolar resistive switching in Cr-doped TiOx thin films

邢钟文   

  1. National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China
  • 收稿日期:2011-02-08 修回日期:2011-06-14 出版日期:2011-09-15 发布日期:2011-09-15

Bipolar resistive switching in Cr-doped TiOx thin films

Xing Zhong-Wen(邢钟文)a)b)†, X. Chenb), N. J. Wub), and A. Ignatievb)   

  1. a National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China; b  Center for Advanced Materials and Department of Physics, University of Houston, Houston, TX 77204, USA
  • Received:2011-02-08 Revised:2011-06-14 Online:2011-09-15 Published:2011-09-15

PDF (PC)

833

赞

摘要： The electric-pulse-induced resistive switching effect is studied for Ti0.85Cr0.15Ox (TCO) films grown on Ir—Si substrates by pulsed laser deposition. Such a TCO device exhibits bipolar switching behaviour with an electric-pulse-induced resistance ratio as large as about 1000% and threshold voltages smaller than 2 V. The resistive switching characteristics may be understood by resistance changes of a Schottky junction composed of a metal and an n-type semiconductor, and its nonvolatility is attributed to the movement of oxygen vacancies near the interface.

关键词: resistive random-access memory (RRAM), electrical-pulse-induced resistive (EPIR)

Abstract: The electric-pulse-induced resistive switching effect is studied for Ti0.85Cr0.15Ox (TCO) films grown on Ir—Si substrates by pulsed laser deposition. Such a TCO device exhibits bipolar switching behaviour with an electric-pulse-induced resistance ratio as large as about 1000% and threshold voltages smaller than 2 V. The resistive switching characteristics may be understood by resistance changes of a Schottky junction composed of a metal and an n-type semiconductor, and its nonvolatility is attributed to the movement of oxygen vacancies near the interface.

Key words: resistive random-access memory (RRAM), electrical-pulse-induced resistive (EPIR)

中图分类号:  (Switching phenomena)

  • 77.80.Fm
73.40.-c (Electronic transport in interface structures) 72.20.-i (Conductivity phenomena in semiconductors and insulators)