中国物理B ›› 2016, Vol. 25 ›› Issue (10): 107302-107302.doi: 10.1088/1674-1056/25/10/107302
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Shuai Su(苏帅), Xiao-Chuan Jian(鉴肖川), Fang Wang(王芳), Ye-Mei Han(韩叶梅), Yu-Xian Tian(田雨仙), Xiao-Yang Wang(王晓旸), Hong-Zhi Zhang(张宏智), Kai-Liang Zhang(张楷亮)
Shuai Su(苏帅), Xiao-Chuan Jian(鉴肖川), Fang Wang(王芳), Ye-Mei Han(韩叶梅), Yu-Xian Tian(田雨仙), Xiao-Yang Wang(王晓旸), Hong-Zhi Zhang(张宏智), Kai-Liang Zhang(张楷亮)
摘要:
In this letter, the Ta/HfOx/BN/TiN resistive switching devices are fabricated and they exhibit low power consumption and high uniformity each. The reset current is reduced for the HfOx/BN bilayer device compared with that for the Ta/HfOx/TiN structure. Furthermore, the reset current decreases with increasing BN thickness. The HfOx layer is a dominating switching layer, while the low-permittivity and high-resistivity BN layer acts as a barrier of electrons injection into TiN electrode. The current conduction mechanism of low resistance state in the HfOx/BN bilayer device is space-charge-limited current (SCLC), while it is Ohmic conduction in the HfOx device.
中图分类号: (Metal-insulator-metal structures)