Analysis of resistive switching behaviors of vanadium oxide thin film

doi:10.1088/1674-1056/22/3/037201

中国物理B ›› 2013, Vol. 22 ›› Issue (3): 37201-037201.doi: 10.1088/1674-1056/22/3/037201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Analysis of resistive switching behaviors of vanadium oxide thin film

韦晓莹^a, 胡明^a, 张楷亮^b, 王芳^b, 赵金石^b, 苗银萍^b

a School of Electronics Information Engineering, Tianjin University, Tianjin 300072, China;
b School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices,Tianjin University of Technology, Tianjin 300384, China

收稿日期:2012-07-07 修回日期:2012-08-21 出版日期:2013-02-01 发布日期:2013-02-01
基金资助:
Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-1064), the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 61101055, 61274113, and 11204212), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20100032120029), and Tianjin Natural Science Foundation of China (Grant No. 10SYSYJC27700).

Analysis of resistive switching behaviors of vanadium oxide thin film

Wei Xiao-Ying (韦晓莹)^a, Hu Ming (胡明)^a, Zhang Kai-Liang (张楷亮)^b, Wang Fang (王芳)^b, Zhao Jin-Shi (赵金石)^b, Miao Yin-Ping (苗银萍)^b

a School of Electronics Information Engineering, Tianjin University, Tianjin 300072, China;
b School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices,Tianjin University of Technology, Tianjin 300384, China

Received:2012-07-07 Revised:2012-08-21 Online:2013-02-01 Published:2013-02-01
Contact: Zhang Kai-Liang E-mail:kailiang_zhang@163.com
Supported by:
Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-1064), the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 61101055, 61274113, and 11204212), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20100032120029), and Tianjin Natural Science Foundation of China (Grant No. 10SYSYJC27700).

摘要/Abstract

摘要： We demonstrated the polarization of resistive switching for Cu/VO_x/Cu memory cell. Switching behaviors of Cu/VO_x/Cu cell were tested by semiconductor device analyzer (Agilent B1500A), and the relative micro-analysis of I-V characteristics of VO_x/Cu was characterized by conductive atomic force microscope (CAFM). The I-V test results indicated that both forming and the reversible resistive switching between low resistance state (LRS) and high resistance state (HRS) can be observed under either positive or negative sweep. The CAFM images for LRS and HRS directly exhibited evidences of the formation and rupture of filaments based on positive or negative voltage. Cu/VO_x/Cu sandwiched structure exhibits a reversible resistive switching behavior and shows potential applications in the next generation nonvolatile memory field.

关键词: VO_x thin films, reversible resistive switching, resistive random access memory (RRAM), conductive atomic force microscope

Abstract: We demonstrated the polarization of resistive switching for Cu/VO_x/Cu memory cell. Switching behaviors of Cu/VO_x/Cu cell were tested by semiconductor device analyzer (Agilent B1500A), and the relative micro-analysis of I–V characteristics of VO_x/Cu was characterized by conductive atomic force microscope (CAFM). The I–V test results indicated that both forming and the reversible resistive switching between low resistance state (LRS) and high resistance state (HRS) can be observed under either positive or negative sweep. The CAFM images for LRS and HRS directly exhibited evidences of the formation and rupture of filaments based on positive or negative voltage. Cu/VO_x/Cu sandwiched structure exhibits a reversible resistive switching behavior and shows potential applications in the next generation nonvolatile memory field.

Key words: VO_x thin films, reversible resistive switching, resistive random access memory (RRAM), conductive atomic force microscope

中图分类号: (Conductivity phenomena in semiconductors and insulators)

72.20.-i

68.35.bg (Semiconductors) 71.30.+h (Metal-insulator transitions and other electronic transitions) 73.40.Sx (Metal-semiconductor-metal structures)

韦晓莹, 胡明, 张楷亮, 王芳, 赵金石, 苗银萍. Analysis of resistive switching behaviors of vanadium oxide thin film[J]. 中国物理B, 2013, 22(3): 37201-037201.

Wei Xiao-Ying (韦晓莹), Hu Ming (胡明), Zhang Kai-Liang (张楷亮), Wang Fang (王芳), Zhao Jin-Shi (赵金石), Miao Yin-Ping (苗银萍). Analysis of resistive switching behaviors of vanadium oxide thin film[J]. Chin. Phys. B, 2013, 22(3): 37201-037201.

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Analysis of resistive switching behaviors of vanadium oxide thin film

Analysis of resistive switching behaviors of vanadium oxide thin film

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