Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

doi:10.1088/1674-1056/23/11/116104

中国物理B ›› 2014, Vol. 23 ›› Issue (11): 116104-116104.doi: 10.1088/1674-1056/23/11/116104

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

孙亚宾, 付军, 许军, 王玉东, 周卫, 张伟, 崔杰, 李高庆, 刘志弘

Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China

收稿日期:2014-04-02 修回日期:2014-06-03 出版日期:2014-11-15 发布日期:2014-11-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60976013).

Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

Sun Ya-Bin (孙亚宾), Fu Jun (付军), Xu Jun (许军), Wang Yu-Dong (王玉东), Zhou Wei (周卫), Zhang Wei (张伟), Cui Jie (崔杰), Li Gao-Qing (李高庆), Liu Zhi-Hong (刘志弘)

Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China

Received:2014-04-02 Revised:2014-06-03 Online:2014-11-15 Published:2014-11-15
Contact: Sun Ya-Bin E-mail:sunyb10@mails.tsinghua.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60976013).

摘要/Abstract

摘要：

The degradations in NPN silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were fully studied in this work, by means of 25-MeV Si, 10-MeV Cl, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current (I_B), current gain (β), neutral base recombination (NBR), and Early voltage (V_A) were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in I_C was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail.

关键词: heavy ion irradiation, displacement damage, SiGe heterojunction bipolar transistor

Abstract:

Key words: heavy ion irradiation, displacement damage, SiGe heterojunction bipolar transistor

中图分类号: (Physical radiation effects, radiation damage)

61.80.-x

73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

孙亚宾, 付军, 许军, 王玉东, 周卫, 张伟, 崔杰, 李高庆, 刘志弘. Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation[J]. 中国物理B, 2014, 23(11): 116104-116104.

Sun Ya-Bin (孙亚宾), Fu Jun (付军), Xu Jun (许军), Wang Yu-Dong (王玉东), Zhou Wei (周卫), Zhang Wei (张伟), Cui Jie (崔杰), Li Gao-Qing (李高庆), Liu Zhi-Hong (刘志弘). Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation[J]. Chin. Phys. B, 2014, 23(11): 116104-116104.

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Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

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