Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

doi:10.1088/1674-1056/27/3/038501

中国物理B ›› 2018, Vol. 27 ›› Issue (3): 38501-038501.doi: 10.1088/1674-1056/27/3/038501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

Xiaoyu Pan(潘霄宇), Hongxia Guo(郭红霞), Yinhong Luo(罗尹虹), Fengqi Zhang(张凤祁), Lili Ding(丁李利)

State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China

收稿日期:2017-09-06 修回日期:2017-12-06 出版日期:2018-03-05 发布日期:2018-03-05
通讯作者: Hongxia Guo E-mail:guohxnint@126.com

Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

Xiaoyu Pan(潘霄宇), Hongxia Guo(郭红霞), Yinhong Luo(罗尹虹), Fengqi Zhang(张凤祁), Lili Ding(丁李利)

State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China

Received:2017-09-06 Revised:2017-12-06 Online:2018-03-05 Published:2018-03-05
Contact: Hongxia Guo E-mail:guohxnint@126.com

摘要/Abstract

摘要： In our previous studies, we have proved that neutron irradiation can decrease the single event latch-up (SEL) sensitivity of CMOS SRAM. And one of the key contributions to the multiple cell upset (MCU) is the parasitic bipolar amplification, it bring us to study the impact of neutron irradiation on the SRAM's MCU sensitivity. After the neutron experiment, we test the devices' function and electrical parameters. Then, we use the heavy ion fluence to examine the changes on the devices' MCU sensitivity pre-and post-neutron-irradiation. Unfortunately, neutron irradiation makes the MCU phenomenon worse. Finally, we use the electric static discharge (ESD) testing technology to deduce the experimental results and find that the changes on the WPM region take the lead rather than the changes on the parasitic bipolar amplification for the 90 nm process.

关键词: displacement damage, neutron irradiation, multiple cell upset (MCU), parasitic bipolar amplification

Abstract: In our previous studies, we have proved that neutron irradiation can decrease the single event latch-up (SEL) sensitivity of CMOS SRAM. And one of the key contributions to the multiple cell upset (MCU) is the parasitic bipolar amplification, it bring us to study the impact of neutron irradiation on the SRAM's MCU sensitivity. After the neutron experiment, we test the devices' function and electrical parameters. Then, we use the heavy ion fluence to examine the changes on the devices' MCU sensitivity pre-and post-neutron-irradiation. Unfortunately, neutron irradiation makes the MCU phenomenon worse. Finally, we use the electric static discharge (ESD) testing technology to deduce the experimental results and find that the changes on the WPM region take the lead rather than the changes on the parasitic bipolar amplification for the 90 nm process.

Key words: displacement damage, neutron irradiation, multiple cell upset (MCU), parasitic bipolar amplification

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

61.80.-x (Physical radiation effects, radiation damage) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

潘霄宇, 郭红霞, 罗尹虹, 张凤祁, 丁李利. Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation[J]. 中国物理B, 2018, 27(3): 38501-038501.

Xiaoyu Pan(潘霄宇), Hongxia Guo(郭红霞), Yinhong Luo(罗尹虹), Fengqi Zhang(张凤祁), Lili Ding(丁李利). Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation[J]. Chin. Phys. B, 2018, 27(3): 38501-038501.

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Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

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