中国物理B ›› 2012, Vol. 21 ›› Issue (10): 104211-104211.doi: 10.1088/1674-1056/21/10/104211

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Incident particle range dependence of radiation damage in a power bipolar junction transistor

刘超铭, 李兴冀, 耿洪滨, 芮二明, 郭立新, 杨剑群   

  1. School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
  • 收稿日期:2012-01-15 修回日期:2012-02-24 出版日期:2012-09-01 发布日期:2012-09-01
  • 基金资助:
    Project supported by the Fundamental Research Funds for the Central Universities (Grant No. HIT.KLOF.2010003) and the National Basis Research Program of China (Grant No. 51320).

Incident particle range dependence of radiation damage in a power bipolar junction transistor

Liu Chao-Ming (刘超铭), Li Xing-Ji (李兴冀), Geng Hong-Bin (耿洪滨), Rui Er-Ming (芮二明), Guo Li-Xin (郭立新), Yang Jian-Qun (杨剑群)   

  1. School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
  • Received:2012-01-15 Revised:2012-02-24 Online:2012-09-01 Published:2012-09-01
  • Contact: Li Xing-Ji E-mail:lxj0218@hit.edu.cn
  • Supported by:
    Project supported by the Fundamental Research Funds for the Central Universities (Grant No. HIT.KLOF.2010003) and the National Basis Research Program of China (Grant No. 51320).

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摘要： The characteristic degradations in silicon NPN bipolar junction transistors (BJTs) of type 3DD155 are examined under the irradiations of 25-MeV carbon (C), 40-MeV silicon (Si), and 40-MeV chlorine (Cl) ions respectively. Different electrical parameters are measured in-situ during the exposure of heavy ions. The experimental data shows that the changes in the reciprocal of the gain variation (Δ (1/β )) of 3DD155 transistors irradiated respectively by 25-MeV C, 40-MeV Si, and 40-MeV Cl ions each present a nonlinear behaviour at a low fluence and a linear response at a high fluence. The Δ (1/β) of 3DD155 BJT irradiated by 25-MeV C ions is greatest at a given fluence, a little smaller when the device is irradiated by 40-MeV Si ions, and smallest in the case of the 40-MeV Cl ions irradiation. The measured and calculated results clearly show that the range of heavy ions in the base region of BJT affects the level of radiation damage.

关键词: radiation effects, ionization damage, displacement damage, transistors

Abstract: The characteristic degradations in silicon NPN bipolar junction transistors (BJTs) of type 3DD155 are examined under the irradiations of 25-MeV carbon (C), 40-MeV silicon (Si), and 40-MeV chlorine (Cl) ions respectively. Different electrical parameters are measured in-situ during the exposure of heavy ions. The experimental data shows that the changes in the reciprocal of the gain variation (Δ (1/β )) of 3DD155 transistors irradiated respectively by 25-MeV C, 40-MeV Si, and 40-MeV Cl ions each present a nonlinear behaviour at a low fluence and a linear response at a high fluence. The Δ (1/β) of 3DD155 BJT irradiated by 25-MeV C ions is greatest at a given fluence, a little smaller when the device is irradiated by 40-MeV Si ions, and smallest in the case of the 40-MeV Cl ions irradiation. The measured and calculated results clearly show that the range of heavy ions in the base region of BJT affects the level of radiation damage.

Key words: radiation effects, ionization damage, displacement damage, transistors

中图分类号:  (Environmental and radiation effects on optical elements, devices, and systems)

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