中国物理B ›› 2012, Vol. 21 ›› Issue (8): 80703-080703.doi: 10.1088/1674-1056/21/8/080703

• GENERAL • 上一篇    下一篇

Effect of bias condition on heavy ion radiation in bipolar junction transistor

刘超铭, 李兴冀, 耿洪滨, 杨德庄, 何世禹   

  1. Department of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
  • 收稿日期:2011-12-04 修回日期:2011-12-17 出版日期:2012-07-01 发布日期:2012-07-01
  • 基金资助:
    Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. HIT.KLOF.2010003) and the National Basis Research Foundation of China (Grant No. 51320).

Effect of bias condition on heavy ion radiation in bipolar junction transistor

Liu Chao-Ming (刘超铭), Li Xing-Ji (李兴冀), Geng Hong-Bin (耿洪滨), Yang De-Zhuang (杨德庄), He Shi-Yu (何世禹 )   

  1. Department of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
  • Received:2011-12-04 Revised:2011-12-17 Online:2012-07-01 Published:2012-07-01
  • Contact: Li Xing-Ji E-mail:lxj0218@hit.edu.cn
  • Supported by:
    Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. HIT.KLOF.2010003) and the National Basis Research Foundation of China (Grant No. 51320).

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摘要： The characteristic degradations in silicon NPN bipolar junction transistor (BJT) of 3DG142 type are examined under the irradiation with 40-MeV chlorine (Cl) ions under forward, grounded, and reverse bias conditions, respectively. Different electrical parameters are in-situ measured during the exposure under each bias condition. From the experimental data, larger variation of base current (IB) is observed after irradiation at a given value of base-emitter voltage (VBE), while the collector current is slightly affected by irradiation at a given VBE. The gain degradation is affected mostly by the behaviour of the base current. From the experimental data, the variation of current gain in the case of forward bias is much smaller than that in the other conditions. Moreover, for 3DG142 BJT, the current gain degradation in the case of reverse bias is more severe than that in the grounded case at low fluence, while at high fluence, the gain degradation in the reverse bias case becomes smaller than that in the grounded case.

关键词: radiation effects, ionization damage, displacement damage, transistors

Abstract: The characteristic degradations in silicon NPN bipolar junction transistor (BJT) of 3DG142 type are examined under the irradiation with 40-MeV chlorine (Cl) ions under forward, grounded, and reverse bias conditions, respectively. Different electrical parameters are in-situ measured during the exposure under each bias condition. From the experimental data, larger variation of base current (IB) is observed after irradiation at a given value of base-emitter voltage (VBE), while the collector current is slightly affected by irradiation at a given VBE. The gain degradation is affected mostly by the behaviour of the base current. From the experimental data, the variation of current gain in the case of forward bias is much smaller than that in the other conditions. Moreover, for 3DG142 BJT, the current gain degradation in the case of reverse bias is more severe than that in the grounded case at low fluence, while at high fluence, the gain degradation in the reverse bias case becomes smaller than that in the grounded case.

Key words: radiation effects, ionization damage, displacement damage, transistors

中图分类号:  (Environmental effects on instruments (e.g., radiation and pollution effects))

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