Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

doi:10.1088/1674-1056/20/5/058503

中国物理B ›› 2011, Vol. 20 ›› Issue (5): 58503-058503.doi: 10.1088/1674-1056/20/5/058503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

徐小波, 张鹤鸣, 胡辉勇, 屈江涛

Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2010-10-29 修回日期:2011-01-11 出版日期:2011-05-15 发布日期:2011-05-15
基金资助:
Project supported by National Ministries and Commissions (Grant Nos. 51308040203 and 6139801), the Fundamental Research Funds for the Central Universities, China (Grant Nos. 72105499 and 72104089), and the Natural Science Basic Research Plan in Shaanxi Pr

Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

Xu Xiao-Bo(徐小波)^†, Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), and Qu Jiang-Tao(屈江涛)

Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2010-10-29 Revised:2011-01-11 Online:2011-05-15 Published:2011-05-15
Supported by:
Project supported by National Ministries and Commissions (Grant Nos. 51308040203 and 6139801), the Fundamental Research Funds for the Central Universities, China (Grant Nos. 72105499 and 72104089), and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008).

摘要/Abstract

摘要： An analytical expression for the collector resistance of a novel vertical SiGe heterojunction bipolar transistor (HBT) on thin film silicon-on-insulator (SOI) is obtained with the substrate bias effects being considered. The resistance is found to decrease slowly and then quickly and to have kinks with the increase of the substrate–collector bias, which is quite different from that of a conventional bulk HBT. The model is consistent with the simulation result and the reported data and is useful to the frequency characteristic design of 0.13 μm millimeter-wave SiGe SOI BiCMOS devices.

Abstract: An analytical expression for the collector resistance of a novel vertical SiGe heterojunction bipolar transistor (HBT) on thin film silicon-on-insulator (SOI) is obtained with the substrate bias effects being considered. The resistance is found to decrease slowly and then quickly and to have kinks with the increase of the substrate–collector bias, which is quite different from that of a conventional bulk HBT. The model is consistent with the simulation result and the reported data and is useful to the frequency characteristic design of 0.13 μm millimeter-wave SiGe SOI BiCMOS devices.

Key words: collector resistance, substrate bias effect, SiGe heterojunction bipolar transistor, thin film silicon-on-insulator

中图分类号: (Bipolar transistors)

85.30.Pq

85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.-z (Semiconductor devices)

徐小波, 张鹤鸣, 胡辉勇, 屈江涛. Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator[J]. 中国物理B, 2011, 20(5): 58503-058503.

Xu Xiao-Bo(徐小波), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), and Qu Jiang-Tao(屈江涛). Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator[J]. Chin. Phys. B, 2011, 20(5): 58503-058503.

参考文献 10

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Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

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