Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation

doi:10.1088/1674-1056/23/4/046104

中国物理B ›› 2014, Vol. 23 ›› Issue (4): 46104-046104.doi: 10.1088/1674-1056/23/4/046104

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation

燕少安^a, 唐明华^a, 赵雯^b, 郭红霞^b, 张万里^a, 徐新宇^a, 王旭东^a, 丁浩^a, 陈建伟^a, 李正^c, 周益春^a

a Key Laboratory of Low Dimensional Materials and Application Technology of the Ministry of Education, Xiangtan University, Xiangtan 411105, China;
b Northwest Institute of Nuclear Technology, Xi'an 710024, China;
c Brookhaven National Laboratory, Upton, NY 11973, USA

收稿日期:2013-06-03 修回日期:2013-09-22 出版日期:2014-04-15 发布日期:2014-04-15
基金资助:
Project supported by the KeyProject of the National Natural Science Foundation of China (Grant No. 11032010), the National Natural Science Foundation of China (Grant Nos. 51072171, 61274107, 61176093, and 11275163), the Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT1080), the 973 Program, China (Grant No. 2012CB326404), the KeyProject of Natural Science Foundation of Hunan Province, China (Grant No. 13JJ2023), the KeyProject of Scientific Research Fund of Education Department of Hunan Province, China (Grant No. 12A129), the Innovation Foundation of Hunan Province of China for Postgraduate, China (Grant No. CX2013B261), the Doctoral Program of Higher Education of China (Grant No. 20104301110001), and the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China.

Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation

Yan Shao-An (燕少安)^a, Tang Ming-Hua (唐明华)^a, Zhao Wen (赵雯)^b, Guo Hong-Xia (郭红霞)^b, Zhang Wan-Li (张万里)^a, Xu Xin-Yu (徐新宇)^a, Wang Xu-Dong (王旭东)^a, Ding Hao (丁浩)^a, Chen Jian-Wei (陈建伟)^a, Li Zheng (李正)^c, Zhou Yi-Chun (周益春)^a

a Key Laboratory of Low Dimensional Materials and Application Technology of the Ministry of Education, Xiangtan University, Xiangtan 411105, China;
b Northwest Institute of Nuclear Technology, Xi'an 710024, China;
c Brookhaven National Laboratory, Upton, NY 11973, USA

Received:2013-06-03 Revised:2013-09-22 Online:2014-04-15 Published:2014-04-15
Contact: Yan Shao-An, Tang Ming-Hua E-mail:yanshaoan@126.com;mhtang@xtu.edu.cn
About author:61.80.Lj; 61.80.Jh; 61.80.Az; 85.50.Gk
Supported by:
Project supported by the KeyProject of the National Natural Science Foundation of China (Grant No. 11032010), the National Natural Science Foundation of China (Grant Nos. 51072171, 61274107, 61176093, and 11275163), the Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT1080), the 973 Program, China (Grant No. 2012CB326404), the KeyProject of Natural Science Foundation of Hunan Province, China (Grant No. 13JJ2023), the KeyProject of Scientific Research Fund of Education Department of Hunan Province, China (Grant No. 12A129), the Innovation Foundation of Hunan Province of China for Postgraduate, China (Grant No. CX2013B261), the Doctoral Program of Higher Education of China (Grant No. 20104301110001), and the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China.

摘要/Abstract

摘要： The single event effect in ferroelectric-gate field-effect transistor (FeFET) under heavy ion irradiation is investigated in this paper. The simulation results show that the transient responses are much lower in a FeFET than in a conventional metal-oxide-semiconductor field-effect transistor (MOSFET) when the ion strikes the channel. The main reason is that the polarization-induced charges (the polarization direction here is away from the silicon surface) bring a negative surface potential which will affect the distribution of carriers and charge collection in different electrodes significantly. The simulation results are expected to explain that the FeFET has a relatively good immunity to single event effect.

关键词: single event effect, heavy ion irradiation, charge collection, ferroelectric memory, FeFET

Abstract: The single event effect in ferroelectric-gate field-effect transistor (FeFET) under heavy ion irradiation is investigated in this paper. The simulation results show that the transient responses are much lower in a FeFET than in a conventional metal-oxide-semiconductor field-effect transistor (MOSFET) when the ion strikes the channel. The main reason is that the polarization-induced charges (the polarization direction here is away from the silicon surface) bring a negative surface potential which will affect the distribution of carriers and charge collection in different electrodes significantly. The simulation results are expected to explain that the FeFET has a relatively good immunity to single event effect.

Key words: single event effect, heavy ion irradiation, charge collection, ferroelectric memory, FeFET

中图分类号: (Atom and molecule irradiation effects)

61.80.Lj

61.80.Jh (Ion radiation effects) 61.80.Az (Theory and models of radiation effects) 85.50.Gk (Non-volatile ferroelectric memories)

燕少安, 唐明华, 赵雯, 郭红霞, 张万里, 徐新宇, 王旭东, 丁浩, 陈建伟, 李正, 周益春. Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation[J]. 中国物理B, 2014, 23(4): 46104-046104.

Yan Shao-An (燕少安), Tang Ming-Hua (唐明华), Zhao Wen (赵雯), Guo Hong-Xia (郭红霞), Zhang Wan-Li (张万里), Xu Xin-Yu (徐新宇), Wang Xu-Dong (王旭东), Ding Hao (丁浩), Chen Jian-Wei (陈建伟), Li Zheng (李正), Zhou Yi-Chun (周益春). Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation[J]. Chin. Phys. B, 2014, 23(4): 46104-046104.

参考文献 16

[1]	Park B H, Kang B S, Bu S D, Noh T W, Lee J and Jo W 1999 Nature 401 682
[2]	Scott J F 2007 Science 315 954
[3]	Scott J F 2001 Ferroelectric Memories (Berlin: Springer Verlag)
[4]	Ishiwara H and Park B E 2003 Proc. Mat. Res. Soc. Symp. 748 61
[5]	Han J P and Ma T P 1998 Appl. Phys. Lett. 72 1185
[6]	Tang M H, Sun Z H, Zhou Y C, Sugiyama Y and Ishiwara H 2009 Appl. Phys. Lett. 94 212907
[7]	Tang M H, Xu X L, Ye Z, Sugiyama Y and Ishiwara H 2011 IEEE Trans. Electron. Dev. 58 370
[8]	Lee B C, Ipek E, Mutlu O and Burger D 2010 Commun. ACM 53 99
[9]	Ho C H, Hsu C L, Chen C C, Liu J T, Wu C S, Huang C C, Hu C and Yang F L 2010 IEDM Dig. Tech. 19.11.11
[10]	Munteanu D and Autran J L 2012 IEEE Trans. Nucl. Sci. 59 773
[11]	Silvaco Inc. ATLAS User's Manual 2011http://www.silvaco.com.cn/products /tcad.html
[12]	Miller S L and McWhorter P J 1992 J. Appl. Phys. 72 5999
[13]	Juan T P, Chang C Y and Lee J Y 2006 IEEE Electron. Dev. Lett. 26 217
[14]	Liu Z, Chen S M, Liang B, Liu B W and Zhao Z Y 2010 Acta Phys. Sin. 59 649 (in Chinese)
[15]	Liu Z, Chen S M, Chen J J, Qin J R and Liu R R 2012 Chin. Phys. B 21 099401
[16]	Roy T, Witulski A F, Schrimpf R D, Alles M L and Massengill L W 2008 IEEE Trans. Nucl. Sci. 55 2948

Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation

Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation

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