[1] |
Zhang Y J, Zou J J, Wang X H, Chang B K, Qian Y S, Zhang J J and Gao P 2011 Chin. Phys. B 20 048501
|
[2] |
Fu X Q, Chang B K, Wang X H, Li B, Du Y J and Zhang J J 2011 Chin. Phys. B 20 037902
|
[3] |
Qiao J L, Chang B K, Qian Y S, Du X Q, Zhang Y J, Gao P, Wang X H, Guo X Y, Niu J and Gao Y T 2010 Acta Phys. Sin. 59 3577 (in Chinese)
|
[4] |
Siegmund O H W, Tremsin A S, Vallerga J V, McPhate J B, Hull J S, Malloy J and Dabiran A M 2008 Proc. SPIE 7021 70211B
|
[5] |
Tripathi N, Bell L D, Nikzad S and Sandvik F S 2010 Appl. Phys. Lett. 97 052107
|
[6] |
Bazarow I V, Dunham B M, Liu X, Virgo M, Dabiran A M, Hannon F and Sayed H 2009 J. Appl. Phys. 105 083715
|
[7] |
Wang X H, Chang B K, Qian Y S, Gao P, Zhang Y J, Guo X Y and Du X Q 2011 Acta Phys. Sin. 60 047901 (in Chinese)
|
[8] |
Qiao J L, Tian S, Chang B K, Du X Q and Gao P 2009 Acta Phys. Sin. 58 5847 (in Chinese)
|
[9] |
Mizuno I, Nihashi T, Nagai T, Niigaki M, Shimizu Y, Shimano K, Katoh K, Ihara T, Okano T, Matsumoto M and Tachino M 2008 Proc. SPIE 6945 69451N
|
[10] |
Pakhnevich A A, Bakin V V, Shaibler G É and Terekhov A S 2007 Phys. Solid State 49 2070
|
[11] |
Stock J, Hilton G, Norton T, Woodgate B, Aslam S, Ulmer M and Aerospace S 2005 Proc. SPIE 5898 58980F
|
[12] |
Machuca F, Liu Z, Maldonado J R, Coyle S T, Pianetta P and Pease R F W 2004 J. Vac. Sci. Technol. B 22 3565
|
[13] |
Siegmund O H W, Hull J S, Tremsin A S, McPhate J B and Dabiran A M 2010 Proc. SPIE 7732 77324T
|
[14] |
Tereshchenko O E, Shaibler G É, Yaroshevich A S, Shevelev S V, Terekhov A S, Lundin V V, Zavarin E E and Besyul'kin A I 2004 Phys. Solid State 46 1949
|
[15] |
Qian Y S, Chang B K, Qiao J L, Zhang Y J, Fu R G and Qiu Y F 2009 Proc. SPIE 7481 74810H
|
[16] |
Qiao J L, Chang B K, Qian Y S, Du X Q, Zhang Y J and Wang X H 2010 Proc. SPIE 7658 76581H
|
[17] |
Qiao J L, Chang B K, Yang Z, Tian S and Gao Y T 2008 Proc. SPIE 6621 66210K
|
[18] |
Fuke S, Sumiya M, Nihashi T, Hagino M, Matsumoto M, Kamo Y, Sato M and Ohtsuka K 2008 Proc. SPIE 6894 68941F
|
[19] |
Uchiyama S, Takagi Y, Niigaki M, Kan H and Kondoh H 2005 Appl. Phys. Lett. 86 103511
|
[20] |
Dabiran A M, Wowchak A M, Chow P P, Siegmund O H W, Hull J S, Malloy J and Tremsin A S 2009 Proc. SPIE 7212 721213
|
[21] |
Norton T, Woodgate B, Stock J, Hilton G, Ulmer M, Aslam S and Vispute R D 2003 Proc. SPIE 5164 155
|
[22] |
Shahedipour F S, Ulmer M P, Wessels B W, Joseph C L and Nihashi T 2002 IEEE J. Quantum Electron. 38 333
|
[23] |
Wang X H, Chang B K, Ren L and Gao P 2011 Appl. Phys. Lett. 98 082109
|
[24] |
Spicer W E 1958 Phys. Rev. 112 114
|
[25] |
Spicer W E and HerreraGómez A 1993 Proc. SPIE 2022 18
|
[26] |
Wang X H, Chang B K, Qian Y S, Gao P, Zhang Y J, Qiao J L and Du X Q 2011 Acta Phys. Sin. 60 057902 (in Chinese)
|
[27] |
Levinshtein M E, Rumyantsev S L and Shur M S 2003 Properties of Advanced Semiconductor Materials (New York: Wiley)
|
[28] |
Muth J F, Brown J D, Johnson M A L, Zhong H Y, Kolbas R M, Cook J W and Schetzina J F 1999 Mater Res. Soc. Symp. Proc. 537 G5.2
|