中国物理B ›› 2022, Vol. 31 ›› Issue (3): 36103-036103.doi: 10.1088/1674-1056/ac11e4

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Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors

Zheng-Zhao Lin(林正兆)1, Ling Lü(吕玲)1,†, Xue-Feng Zheng(郑雪峰)1, Yan-Rong Cao(曹艳荣)2, Pei-Pei Hu(胡培培)3, Xin Fang(房鑫)1, and Xiao-Hua Ma(马晓华)1   

  1. 1 School of Microelectronics, Xidian University, Xi'an 710071, China;
    2 School of Mechano-Electronic Engineering, Xidian University, Xi'an 710071, China;
    3 Institute of Modern Physics, Chinese Academy of Sciences(CAS), Lanzhou 730000, China
  • 收稿日期:2021-06-02 修回日期:2021-07-02 接受日期:2021-07-07 出版日期:2022-02-22 发布日期:2022-02-17
  • 通讯作者: Ling Lu E-mail:llv@xidian.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 12035019 and 11690042) and Science Challenge Projects (Grant No. TZ2018004).

Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors

Zheng-Zhao Lin(林正兆)1, Ling Lü(吕玲)1,†, Xue-Feng Zheng(郑雪峰)1, Yan-Rong Cao(曹艳荣)2, Pei-Pei Hu(胡培培)3, Xin Fang(房鑫)1, and Xiao-Hua Ma(马晓华)1   

  1. 1 School of Microelectronics, Xidian University, Xi'an 710071, China;
    2 School of Mechano-Electronic Engineering, Xidian University, Xi'an 710071, China;
    3 Institute of Modern Physics, Chinese Academy of Sciences(CAS), Lanzhou 730000, China
  • Received:2021-06-02 Revised:2021-07-02 Accepted:2021-07-07 Online:2022-02-22 Published:2022-02-17
  • Contact: Ling Lu E-mail:llv@xidian.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 12035019 and 11690042) and Science Challenge Projects (Grant No. TZ2018004).

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摘要： AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with heavy ions at various fluences. After irradiation by 2.1 GeV181 Ta32+ ions, the electrical characteristics of the devices significantly decreased. The threshold voltage shifted positively by approximately 25% and the saturation currents decreased by approximately 14%. Defects were induced in the band gap and the interface between the gate and barrier acted as tunneling sites, which increased the gate current tunneling probability. According to the pulsed output characteristics, the amount of current collapse significantly increased and more surface state traps were introduced after heavy ion irradiation. The time constants of the induced surface traps were mainly less than 10 μs.

关键词: gallium nitride, radiation effects, defects, pulse testing

Abstract: AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with heavy ions at various fluences. After irradiation by 2.1 GeV181 Ta32+ ions, the electrical characteristics of the devices significantly decreased. The threshold voltage shifted positively by approximately 25% and the saturation currents decreased by approximately 14%. Defects were induced in the band gap and the interface between the gate and barrier acted as tunneling sites, which increased the gate current tunneling probability. According to the pulsed output characteristics, the amount of current collapse significantly increased and more surface state traps were introduced after heavy ion irradiation. The time constants of the induced surface traps were mainly less than 10 μs.

Key words: gallium nitride, radiation effects, defects, pulse testing

中图分类号:  (Physical radiation effects, radiation damage)

  • 61.80.-x
61.72.uj (III-V and II-VI semiconductors)